国家/地区 中国（7）
IPC部 C（5） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3） H01B（2） H01L（2）
IPC C01B031/04（2） H01B013/00（2） H01L031/0224（2）
发明人 BI H（7）
公开年 2012（4） 2011（2）
申请年 2011（7）
专利权人 CHINESE ACAD.（4） UNIV SOUTHEA.（2）

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Graphene-based back electrode material used for polycrystalline cadmium telluride solar cell, has three-dimensional continuous network structure of graphene and binder.

BI H, HUANG F, LIANG J, LIN T

Preparation of three-dimensional continuous graphene network structure composite material as e.g. electrical conductive material, involves adding three-dimensional continuous graphene skeleton composite structure, soaking and curing.

BI H, HUANG F, LIN T, TANG Y

Ferroferric oxide/reducing oxidation graphene composite absorbing material of hollow hemisphere structure comprises composite absorbing material of multilayer composite structure.

BI H, SUN J, YUAN Y, XU H

Graphene casting by pouring graphene oxide dispersion in hydrothermal reactor cup, adding ammonia or sodium hydroxide, heating to obtain graphene gel, and drying.

BI H, SUN L, XU F, WAN N, YIN K

Graphene/copper nano-wire composite conductive material useful in fields of photovoltaics, semiconductors, electronics or energy storage devices, comprises graphene, copper nano-wire and binding agent.

BI H, HUANG F, LIANG J, LIN T

Preparation of graphene three-dimensional solid involves mixing graphene oxide with water, and stirring or ultrasonically dispersing for forming graphene oxide solution, and reacting with alkaline solution.

XU F, WAN N, YIN K, SUN L, BI H