国家/地区 中国（5）
IPC部 C（3） H（3）
IPC大类 H01（3） C01（2）
IPC小类 H01L（3） C01B（2）
IPC
发明人 CHEN L（5）
公开年 2015（5）
申请年 2015（5） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Photoelectric detector preparing method involves forming graphene layer, and obtaining structural surface, and contacting graphene layer and thin film semiconductor layer with each other to form hetero-junction portion.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Graphene device structure contact electrode preparation method, involves structure section arranged on linear graphene edge, depositing metal covered with section structure, and one-dimensional graphene connected with metal electrode.

DENG L, HE L, JIANG M, LI L, XIE X, ZHANG D, XIE H, WANG H, CHEN L

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L