国家/地区 台湾（15）
IPC部 C（11） B（8） H（8）
IPC大类 C01（9） H01（8） B32（6）
B05（2） C03（2） C08（2）
IPC小类 C01B（9） H01L（7） B32B（6）
B05D（2） C03C（2） C08J（2）
IPC C01B031/04（7） B32B009/00（4） C01B032/182（3）
B05D001/18（2） B05D003/02（2） B32B038/10（2）
C01B032/20（2） C03C017/00（2） H01L021/336（2）
H01L021/76（2） H01L029/06（2） H01L029/16（2）
H01L029/66（2） H01L029/78（2）
发明人 CHEN T（15）
公开年 2015（4） 2021（4） 2014（3） 2022（2）
申请年 2014（6）  2019（2）  2020（2） 
专利权人 NITRONIX NAN.（4） TAIWAN SEMIC.（3） ANJU SCI TE.（2） ENERAGE INC（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Rubber composition used in energy-saving tire, comprises rubber and rubber reinforcing agent comprising graphene oxide and carbon black.

CHEN T, LIN W, LIN Y

Anode material used in lithium battery for portable electronic application, comprises spinel-structured high entropy nickel-manganese-iron-metal oxide.

CHEN H, KUO C, WANG S, CHEN T

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Resistive memory device comprises word lines laterally extends along second horizontal direction and laterally spaced apart along first horizontal direction, and selector material layer located between each of word lines.

LI L, CHEN T, CHENG C, CHIANG H, JIANG H, ZHENG Z, CHEN Z

Device comprising physical properties controlled by microstructure, comprises base layer having patterned surface, and two-dimensional structure layer formed on patterned surface of base layer.

CHEN T, HO S, HSIEH Y, CHANG C, CHANG C H

Transparent antistatic film useful in electronic devices, comprise substrate comprising first surface, and transparent graphene coating disposed on the first surface and comprising surface modified graphene nanosheets and carrier resin.

WU M Y, HSIEH C, SHEN F, CHEN T, JIAN Y, WU Y, XIE C, CHEN Z

Formation process of graphene-coated glass, involves heating sandwich structure to predetermined temperature above release temperature of thermal release tape to remove tape or graphene from flexible glass substrate.

JOHNSON B Y, LIU X, MAZUMDER P, SONI K K, CHEN T L, MARTINFRANCES M M, PRUNERI V, CHEN T, MARCHENA M, MARTIN F M M

Apparatus and method for formatting graphene film, and graphene film structure.

LI L, WU F, CHEN T, CHOU T, LI L J, WU F Y, CHEN T Y

Apparatus for graphene formation includes an electrolytic chamber, at least one first electrode includes an electrolytic chamber, at least one first electrode.

LI L, WU F, CHEN T, CHOU T, LI L J, WU F Y, CHEN T Y