国家/地区 美国（13）
IPC部 H（11） B（7） C（5）
IPC大类 H01（11） C01（4） B32（3）
B82（3） C03（2）
IPC小类 H01L（10） C01B（4） B32B（3）
B82Y（3） C03C（2）
IPC C01B032/182（3） B32B009/00（2） B82Y030/00（2）
C01B031/04（2） C03C017/00（2） H01L021/336（2）
H01L021/76（2） H01L027/24（2） H01L029/06（2）
H01L029/16（2） H01L029/66（2） H01L029/78（2）
H01L045/00（2） H01L051/56（2）
发明人 CHEN T（13）
公开年 2021（5） 2014（3） 2022（2）
申请年 2012（2）  2014（2）  2019（2）  2021（2）  2022（2） 
专利权人 TAIWAN SEMIC.（4） ANJU SCI TE.（2） ENERAGE INC（2） INT BUSINESS.（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Forming at least one resistive memory array over substrate involves forming word line on each of layer stacks within unfilled volumes of line trenches, where lower bit lines comprise carbon-based conductive material containing hybridized carbon atoms, upper bit lines comprise conductive material.

LI L, CHEN T, CHENG C, CHIANG H

Membrane used for separating gas such as carbon dioxide, hydrogen sulfide and hydrogen chloride from feed gas stream, comprises base, support layer comprising gas permeable polymer and having carbon dioxide permeance and selective polymer layer comprising selective polymer matrix.

HO W S W, PANG R, CHEN T

Anode material used in lithium battery for portable electronic application, comprises spinel-structured high entropy nickel-manganese-iron-metal oxide.

CHEN H, KUO C, WANG S, CHEN T

Method for forming fin-type field effect transistor device, involves forming convex dielectric fin over substrate, forming channel layer on upper surface of dielectric fin along wall of dielectric fin, and forming channel enhancement layer.

HUNG Y, ZHENG Z, CHEN Z, JIANG H, LI L, CHIANG H, CHEN T, CHENG C, HONGITISE, CENTISEAN, RELANEBELL

Resistive memory device comprises word lines laterally extends along second horizontal direction and laterally spaced apart along first horizontal direction, and selector material layer located between each of word lines.

LI L, CHEN T, CHENG C, CHIANG H, JIANG H, ZHENG Z, CHEN Z

Device comprising physical properties controlled by microstructure, comprises base layer having patterned surface, and two-dimensional structure layer formed on patterned surface of base layer.

CHEN T, HO S, HSIEH Y, CHANG C, CHANG C H

Transparent antistatic film useful in electronic devices, comprise substrate comprising first surface, and transparent graphene coating disposed on the first surface and comprising surface modified graphene nanosheets and carrier resin.

WU M Y, HSIEH C, SHEN F, CHEN T, JIAN Y, WU Y, XIE C, CHEN Z

Formation process of graphene-coated glass, involves heating sandwich structure to predetermined temperature above release temperature of thermal release tape to remove tape or graphene from flexible glass substrate.

JOHNSON B Y, LIU X, MAZUMDER P, SONI K K, CHEN T L, MARTINFRANCES M M, PRUNERI V, CHEN T, MARCHENA M, MARTIN F M M

Manufacturing nano-graphene sheets involves intercalating and oxidizing a graphite material to form a graphite oxide by mixing the graphite material with at least one intercalation agent and at least one oxidant.

WU M Y, HSIEH C, LIN G, YEH P, CHEN T, CHEN Z, WU Y, XIE C, YE B, HSIEH C Y, LIN G W, YEH P Y, CHEN T H