国家/地区 中国（48） 台湾（4） 美国（4）
IPC部 C（33） B（10） H（9）
G（6）
IPC大类 C01（13） C08（8） H01（7）
C23（6） B01（5） C25（4）
G01（4） B32（3） C02（3）
H05（3） C07（2） C09（2）
C30（2）
IPC小类 C01B（13） C08L（6） C23C（6）
B01J（5） C08K（5） H01M（5）
G01N（4） B32B（3） C02F（3）
C08G（3） C25D（3） H01L（3）
C08F（2） C09D（2） C30B（2）
IPC C01B031/04（10） C08K003/04（5） C23C016/26（4）
B32B009/04（3） C08K009/04（3） C25D015/00（3）
B32B017/02（2） B32B033/00（2） C01B032/194（2）
C02F001/30（2） C08K003/22（2） C08L023/06（2）
C08L067/02（2） C09D007/65（2） C25D003/12（2）
发明人 CHEN Z（49）
公开年 2014（31） 2015（17）
申请年 2014（49）
专利权人 SUZHOU HONGJ.（8） SHANGHAI INS.（7） NAICHUANG TE.（4） TAICANG PIO .（3）
UNIV GUANGXI.（3） UNIV SHANGHA.（3） NINGGUO YUHU.（2） UNIV CHINA E.（2）
UNIV SHANGHA.（2）

Processing cathode of lithium ion battery comprises mixing graphene, conductive carbon and binder with water to form slurry, coating slurry on aluminum foil as cathode sheet, immersing in electrolyte, and assembling into lithium ion battery.

CHEN Z

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Method for representing graphene, involves forming graphene on substrate, and followed by judging damage condition of graphene surface according to corrosion degree of lower part of graphene substrate.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Graphene nanoribbon carrier and its preparation method capable of being used in delivering anti-tumor medicament, with low toxicity, excellent compatibility to bio-system, and able to be fast discharge out of the body.

SUN J, CHEN Z, LU Y, WEI G, MA Z, LIN Z

Device for preparing graphene film, comprises tank body having accommodating space, where accommodating space comprises solution, feeding unit, graphene solution and transmission apparatus.

CHEN Z, LI L, ZHOU T, WU F

Method for determining use of chemical vapor deposition grown graphene crystal orientation of polycrystalline copper substrate surface, has determining use of graphene crystal orientation of copper substrate surface.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Graphene generating device has main portion that is comprised with graphene material which is formed on second electrode, and porous fill material which is formed between two electrodes.

CHEN Z, LI L, WU F, ZHOU T

Manufacturing nano-graphene sheets involves intercalating and oxidizing a graphite material to form a graphite oxide by mixing the graphite material with at least one intercalation agent and at least one oxidant.

WU M Y, HSIEH C, LIN G, YEH P, CHEN T, CHEN Z, WU Y, XIE C, YE B, HSIEH C Y, LIN G W, YEH P Y, CHEN T H

Graphene FET terahertz wave adjustor, has medium layer made of aluminum oxide layer with specific thickness, and graphene thin film and source leakage and annular grate electrodes formed at back of semiconductor substrate.

CHEN Z, SHEN Y, WEN Q, TIAN W, YANG Q, ZHANG H, MAO Q