国家/地区 韩国（6） 美国（2）
IPC部 B（4） C（4）
IPC大类 C01（4） B82（3） C23（3）
IPC小类 C01B（4） C23C（3） B82B（2）
IPC C01B031/02（4） B82B003/00（2） C23C016/26（2）
发明人 CHO S M（6）
公开年 2012（6）
申请年 2010（3）  2011（3） 
专利权人 SAMSUNG TECH.（6） HANWHA TECHW.（3）

Post-treating method of graphene used for e.g. biosensor, involves forming metal thin film on graphene, disposing liquid phase carrier on graphene, hardening carrier, and separating carrier and graphene from metal thin film.

WON D, CHO S, YOON J, NA D, WON D K, CHO S M, YOON J H, NA D H, YUAN D

Transfer method of graphene used for electronic device e.g. display device, involves transferring graphene in substrate by removing imprint material on base element.

GWAN W D, MIN C S, CHEOL R J, WON D K, CHO S M, RYU J C

Manufacture of graphene-transcribing tape includes arranging graphene patches on carrier tape.

WON D K, CHO S M, RYU J C

Graphene synthesis chamber has multiple through holes that are formed for connecting seating place and portal.

CHO S M, WON D K

Manufacture of graphene involves transferring base component comprising support layer, separation layer, and catalyst metal layer into chamber, passing carbon vapor source into chamber, and cooling base component.

CHO S M, WON D K

Method of manufacturing grapheme used in FET, involves forming graphene on catalyst layer by cooling catalyst layer, and taking out supporting belt, on which catalyst layer is loaded and graphene is formed, from chamber to outside.

CHO S, WON D, CHO S M, WON D K, CHO S H