国家/地区 韩国（9）
IPC部 C（7） B（5） H（2）
IPC大类 C01（7） B01（2） B41（2）
H01（2）
IPC小类 C01B（7） B01J（2） B41M（2）
H01L（2）
IPC C01B031/02（7） B41M005/10（2）
发明人 CHOI M（9）
公开年 2014（7） 2015（2）
申请年 2013（9）
专利权人 LG ELECTRONI.（9） UNIV SEOUL N.（2）

Graphene film comprises substrate, graphene layer provided on substrate, and charge transport layer comprising nanowires provided between substrate and graphene layer.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping graphene, comprises preparing dispersed solution of the molecules having molecular structure linearly connected with two aromatic rings, applying the obtained solution on graphene, and drying the solution.

MOON J, HONG B, PARK S, JUNG M, CHOI M

Doping of graphene used for preparing doped graphene, involves forming dopant using graphene flakes, and doping graphene using dopant.

CHOI M, KIM T, MOON J, JUNG M

Producing patterned graphene used in touch panel, comprises etching graphene using an ink pattern, drying the ink pattern, forming the ink pattern including a conductive material or dopant on graphene, and forming graphene on a substrate.

JUNG M, CHOI M, KIM T, MOON J

Producing doped graphene, comprises forming a carbon donor layer including a dopant on a substrate, forming a protective layer on the carbon donor layer, and heating the carbon donor layer.

CHOI M, KIM T, MOON J, JUNG M

Device useful for producing graphene, comprises a chamber loaded with catalytic metal, having gas inlet and outlet, and a thermal expansion compensating unit to compensate difference of thermal expansion of graphene and catalytic metal.

MOON J, KIM T, CHOI M, JUNG M

Apparatus useful for manufacturing graphene, comprises source decomposition unit to decompose carbon source set on one side of a forming chamber, and a feeding unit to supply catalyst metal via source decomposition unit and forming chamber.

MOON J, KIM T, CHOI M, JUNG M

Thin film silicon solar cell manufacturing method, involves forming polycrystalline silicon on graphene by utilizing thin film structure, where amorphous silicon is heat-treated on graphene that is formed on metallic board.

RHO J, CHOI M, KIM T

Manufacturing method of silicon semiconductor element for organic LED, involves producing device structure using the polycrystalline silicon which is formed on graphene.

RHO J, CHOI M, KIM T