国家/地区 韩国（26） 美国（6）
IPC部 H（19） C（12） B（10）
A（2） G（2）
IPC大类 H01（16） C01（10） B01（6）
B82（5） C23（3） H05（3）
A61（2） C04（2）
IPC小类 H01L（12） C01B（10） B01J（5）
B82Y（4） B82B（3） C23C（3）
C04B（2） H01B（2） H01S（2）
H05K（2）
IPC B01J019/08（5） C01B031/04（5） B82B001/00（3）
C01B031/02（3） H01L021/336（3） H01L029/78（3）
H01L045/00（3） B82B003/00（2） B82Y030/00（2）
B82Y040/00（2） C01B032/184（2） C23C016/26（2）
H01B001/04（2） H01L021/027（2） H01L031/0224（2）
发明人 CHOI S Y（26）
公开年 2012（6） 2013（4） 2016（3） 2011（2） 2015（2） 2017（2） 2020（2） 2021（2） 2022（2）
申请年 2011（5）  2010（4）  2016（3）  2012（2）  2014（2）  2015（2）  2018（2）  2020（2） 
专利权人 KOREA ADVANC.（6） CHEORWON PLA.（5） KOREA ADV IN.（5） ELECTRONICS .（3）
KOREA ADVANC.（3） UNIV AJOU IN.（2）

Ceramic composition used in manufacturing multi-layer ceramic capacitor, comprises reduced graphene oxide and strontium-doped silica-titanium oxide.

LEE S, TRAN T, CHOI S Y, KIM M K

Resistive RAM, has resistance change material layer that is formed on heat conductive material layer, and second electrode layer which is formed in resistor material layer.

CHOI S Y, CHANG B C

Optoelectronic device comprises substrate, channel layer stacked on substrate, source and drain electrodes spaced apart from each other and stacked on channel layer, and photoelectroactive layer stacked between source electrode and drain electrode.

CHOI S Y, SIK Y K, JUN L, PARKJUNGHOON

Soft memristor for soft neuromorphic system has metal diffusion barrier layer formed on first electrode layer, and resistive switching material layer formed on metal diffusion barrier layer.

CHA J H, JANG B C, CHOI S, CHOI S Y, CHANG B C, JUNHWE C

Making doped graphene thin film with mesoporous structure using flash lamp involves coating mixture solution of doping element source-having material with doping element and graphene oxide on substrate and irradiating light to the solution.

CHOI S, CHA J, KIM I, CHOI S Y, JUNHWE C, DOO K, KIM D H

Multilayer graphene-based optoelectronic device has multilayer graphene layer that serves to induce plasmon bonding between nanostructure layer and upper electrode at same time plays role of carrier generation by light.

CHOI S Y, JUN L

Manufacturing nitrogen-doped porous graphene involves preparing aqueous solution containing graphene oxide involves etching graphene oxide with etchant to produce porous graphene oxide in which one pore is formed.

CHOI J S, LEE J S, BANG G S, SHIN G H, CHOI S Y

Grapheme production involves preparing graphite, oxidizing graphite, subjecting graphite oxide to thermal plasma treatment, and then exfoliating grapheme, and enables to bond metal nanoparticles onto surface of graphene.

KIM S I, SON B K, CHOI S Y

Micro type nano-second pulse laser unit, has graphene saturable absorption body equipped in end of channel waveguide, light absorption layer for coating graphene on channel waveguide, and gain medium part formed with channel waveguide.

ROTERMUND F, YEOM D I, KIM M H, CHOI S Y, AHN K J, CALMANO T, KRANKEL C, HUBER G

Transferring graphene used in organic electroluminescent device, involves immersing metal catalyst and graphene sequentially deposited on substrate in polar solvent and then separating immersed metal catalyst and graphene from substrate.

CHOI S Y, PARK H M