国家/地区 韩国（6） 美国（2）
IPC部 B（4） H（4） C（3）
IPC大类 H01（4） B01（3） C23（3）
B82（2） C01（2）
IPC小类 H01L（4） C23C（3） B01J（2）
B82Y（2） C01B（2）
IPC H01L021/336（3） H01L029/78（3） B01J019/08（2）
C01B031/02（2） C23C016/26（2） H01L021/027（2）
发明人 CHOI S Y（6）
公开年 2012（6）
申请年 2011（4）  2010（2） 
专利权人 KOREA ADV IN.（4） ELECTRONICS .（2）

Manufacturing method of nanoporous membrane used in separation device, involves transferring graphene nanostructure with pore of columnar structure to upside of columnar structure.

LEE D S, PARK S H, CHOI S Y, JUNG M Y, KIM S H

Graphene transistor manufacturing method involves forming drain and gate electrode on insulating layer that is laminated between source and drain regions.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for improving graphene property involves irradiating laser beam on graphene grown on substrate, and heat treating.

LEE K J, CHOI I S, CHOI S Y, HONG B H

Graphene oxide memory device e.g. aluminum/graphene oxide/aluminum/polyethersulfone memory device, has electron channel layer placed on lower electrode by using graphene oxide, and upper electrode placed on electron channel layer.

CHOI S Y, KIM J Y, JEONG H Y, YOOL C S, KIM J, YOUNG J H

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method for manufacturing graphene transistor, involves laminating insulating layer in semiconductor device, providing drain and gate electrode metal layer that is laminated on source.

LEE K J, CHOI I S, CHOI S Y, HONG B H