国家/地区 美国（5） 韩国（3）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L029/16（4） H01L029/66（3） H01L021/336（2）
H01L021/78（2） H01L029/06（2） H01L029/40（2）
H01L029/778（2） H01L029/78（2） H01L029/786（2）
发明人 CHUNG H（5）
公开年 2014（3）
申请年 2013（3） 
专利权人 CHUNG H（5）

Method for fabricating graphene electronic device i.e. FET, of radio frequency device, involves exposing graphene layer in channel formation region by wet etching metal protection layer and metal layer using photoresist pattern.

HEO J, CHUNG H, SEO S, LEE S, YANG H

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Graphene device, preferably inverter, includes upper oxide layer on embedded gates, and graphene channel and electrodes on upper oxide layer.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H