国家/地区 中国（5）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC H01L021/285（2） H01L021/336（2） H01L029/423（2）
H01L029/78（2）
发明人 DI Z（5）
公开年 2013（2） 2014（2）
申请年 2013（5）
专利权人 SHANGHAI INS.（4）

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Graphene FET, has metal source electrode and metal drain electrode that are fixed on substrate surface, and top gate electrode arranged between bottom and upper surfaces of graphene channel layer, where channel layer is formed with gap.

WEI X, ZHENG L, DI Z, FANG Z

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Controlling growth of number of graphene layer involves forming first nickel layer on copper substrate, injecting using ion injection method in nickel layer, annealing, introducing carbon by copper in nickel layer, reconstructing graphene.

CHEN D, DI Z, DING G, LU Z, MA J, WANG G, XIE X, ZHANG M

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X