国家/地区 中国（9）
IPC部 C（5） H（4）
IPC大类 H01（4） C01（3） C08（2）
IPC小类 H01L（4） C01B（3）
IPC H01L021/28（3） C01B032/194（2） H01L021/285（2）
H01L029/423（2）
发明人 DI Z（9）
公开年 2021（8）
申请年 2021（9）
专利权人 SHANGHAI INS.（5）

High-dielectric constant, low-dielectric loss thermoplastic polyurethane elastomer composite material for preparing e.g. transducer, comprises conductive fillers with negative surface potential and inorganic fillers with positive surface potential, after self-assembly to form layered compound.

DI Z, HUANG Q, FU X, ZHANG K

Activating two-dimensional nitrogen-doped graphene used in chemical material preparation, comprises e.g. mixing melamine, ammonium chloride and polyvinylpyrrolidone, calcining, adding magnesium sulfate into nitrogen-doped graphene, soaking black and white material in beaker and filtering.

GUI J, TIAN Z, LIU Z, ZHANG L, DI Z, WANG S, XU Y, REN B

Method for realizing dry transfer graphene continuous film, involves pressing PVA film on heterjunction at first preset temperature by using PVC film, and selecting second preset temperature as hardening temperature of PVA film.

XUE Z, GUO W, DI Z

anti-corrosion coating formed by the paint comprises ketone solvent, amine curing agent, and adhesion promoter, silicon carbide, flake pigments, epoxy graphene slurry, amino resin, and mixed solvent.

MA S, XU Y, LIAN B, WANG Q, ZHANG W, WANG X, SHEN X, XU K, DI Z, LI M, FANG J

Preparing three-dimensional porous graphene oxide sponge comprises heating graphene oxide/para-aminosalicylate sodium composite, removing template, adding deionized water, freeze-drying and vacuum-drying graphene oxide block.

DAI Z, ZHANG F, ZHANG J, DI Z

Manufacturing transistor structure involves forming graphene layer on an upper surface of substrate, and forming source/drain electrode layer on upper surface of graphene layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing top gate structure for semiconductor structure, involves mechanically peeling laminated structure, transferring stacked structure to target substrate, and removing support layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for preparing electrode layer in semiconductor structure, involves providing substrate, forming graphene layer on upper surface of substrate, forming electrode layer on upper surface of graphene layer, and removing supporting layer.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M

Method for manufacturing dielectric material and semiconductor structure, involves transferring laminated structure to target substrate, removing supporting layer, and leaving dielectric material layer on surface of target substrate.

DI Z, LIU G, XUE Z, TIAN Z, ZHANG M