国家/地区 中国（5）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L021/02（2） H01L021/265（2）
发明人 DI Z（5）
公开年 2013（5）
申请年 2012（3）  2013（2） 
专利权人 CHINESE ACAD.（4） SHANGHAI INS.（2）

Controlling growth of number of graphene layer involves forming first nickel layer on copper substrate, injecting using ion injection method in nickel layer, annealing, introducing carbon by copper in nickel layer, reconstructing graphene.

CHEN D, DI Z, DING G, LU Z, MA J, WANG G, XIE X, ZHANG M

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Controllable industrial graphene metal nano-meter structure array preparation method, involves forming platform frame with groove, and reducing temperature of segregation carbon metal solid solution for complete graphene preparation process.

CHEN L, DI Z, WANG G, WANG X, WEI X, ZHANG M

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y