国家/地区 中国（7） 美国（3） 世界知识产权组织（3）
IPC部 H（4） C（3） D（3）
B（2）
IPC大类 D06（3） H01（3） C30（2）
IPC小类 C30B（2） D06M（2）
IPC C30B029/02（2） D06M013/188（2） D06M015/03（2）
发明人 DUAN X（9）
公开年 2016（2） 2021（2）
申请年 2014（3）  2018（2） 
专利权人 DUAN X（9）

Method for preparing organic nano high temperature resistant electrothermal film involves mixing graphite, carbon crystal, carbon black, graphene and auxiliary agent, adhering base material on insulating material, and printing slurry on substrate.

ZHANG S, DUAN X, MENG M, WANG C

Preparing modified coconut bran product useful for preparation of polyurethane synthetic leather with spiny non woven fabric comprises e.g. adding coconut husk into diethylaluminum hypophosphite and diethylenetriaminepentaacetic acid.

DUAN X, LI D, ZHANG L

Manufacturing non-woven fabric comprises e.g. immersing semi-finished product treated with second immersion liquid in dark place, and irradiating with ultraviolet lamp, taking out, washing, and drying.

DUAN X

Preparing graphene modified polyurethane synthetic leather comprises preparing antibacterial agent, modified coco bran, carboxylated graphene sheet, spun-laced non-woven fabric, coating slurry and solidifying.

DUAN X, LI D, ZHANG L

Electrode comprising a three-dimensional graphene framework, used in e.g. energy storage device, comprises interconnected conductive network of graphene sheets with porous structure, and composite material including e.g. capacitive material.

DUAN X, HUANG Y, PAPANDREA B, XU X

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Single crystal graphene coil, has substrate provided with winding form part, and graphite crystal structure provided with super-conductive single crystal grapheme wire, where graphite crystal structure is arranged with winding film.

DUAN X

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene transistor used to fabricate self-aligned chemical vapor deposition transistor arrays comprises substrate; source electrode; drain electrode; graphene channel extending between the electrodes; and top gate disposed on channel.

DUAN X, HUANG Y, LIAO L, BAI J