国家/地区 美国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L029/66（4） H01L021/336（3） H01L029/06（3）
H01L029/78（3） H01L021/02（2） H01L029/16（2）
H01L029/786（2）
发明人 FARMER D B（5）
公开年 2014（5）
申请年 2013（3）  2012（2） 
专利权人 INT BUSINESS.（5）

Carbon nanotube manufacturing method e.g. for nanotube-based transistor, involves aligning carbon nanotubes between graphene electrodes in direction parallel with electric field generated across graphene electrodes.

AVOURIS P, DIMITRAKOPOULOS C, FARMER D B, STEINER M B, ENGEL M, KRUPKE R, LIN Y

Fabrication method of semiconducting device such as transistor, involves forming graphene sheet, source and drain on sheet, and slot in graphene sheet, and applying etchant to substrate through slot formed in graphene.

FARMER D B, FRANKLIN A D, SMITH J T

Semiconductor device has recess which is formed in substrate beneath graphene sheet via etchant passing through graphene sheet formed on substrate.

FARMER D B, FRANKLIN A D, SMITH J T

Graphene FET e.g. single-layer graphene FET, has graphene sheet coupled to top surface of gate layer and top surface of one of source and drain contacts, where gate layer is adapted to influence electric field of graphene sheet.

FARMER D B, FRANKLIN A D, OIDA S, SMITH J T

Method for forming graphene field-effect transistor (GFET), involves forming first graphene sheet, and coupling first gate layer to surface of first grapheme sheet to influence electric field of first grapheme sheet.

FARMER D B, FRANKLIN A D, OIDA S, SMITH J T