国家/地区 中国（21）
IPC部 C（12） G（7） H（6）
B（5）
IPC大类 C23（4） G21（4） H01（4）
C08（3） C30（3） G01（3）
C02（2） C07（2） C25（2）
H05（2）
IPC小类 C23C（4） C30B（3） G21H（3）
H01L（3） C02F（2） C08K（2）
C08L（2） C25D（2） G01N（2）
H05K（2）
IPC C30B025/18（3） G21H001/06（3） C08K003/04（2）
C08K009/06（2） C23C016/26（2） C30B029/40（2）
H01L021/02（2）
发明人 FENG H（21）
公开年 2021（11） 2022（10）
申请年 2021（21）
专利权人 CHINA NUCLEA.（4） CEC COMPOUND.（2） UNIV NORTHWE.（2）

Heat-resistant polyethylene terephthalate (PET) anti-bacterial film material used for liquid crystal display screen, comprises transparent PET base film, where surface and lower surface of base film are provided with heat-resistant mechanism.

HUANG J, YANG W, HUANG Y, FENG H

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Detecting phosphatidylinositol proteoglycan-3 used as electrochemical signal probe, comprises modifying electrode and construction of biosensor interface.

ZHOU Z, WANG B, LIU W, FENG H, LI G

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Schottky diode for use in gallium nitride-based schottky beta-nuclear battery used in deep space detection field, has graphene used as bottom electrode and top electrode of gallium nitride-based schottky diode.

ZHANG J, DENG Z, WANG L, SU C, FENG H, LI P, CHEN Z, WANG X, WU W, ZHOU C, YANG Y

Preparing ultra-thin nickel radiation source useful to prepare Schottky junction type laminated beta-radiation cell, involves dripping nickel source on surface polymethyl methacrylate/graphene film and arranging nickel nano particles in oriented mode along direction of magnetic line.

WANG X, WANG L, SU C, FENG H, CHEN Z, ZHANG J, LI P, WU W, YANG Y, ZHOU C

Preparing graphene-based lithium iron phosphate anode material, involves carrying out co-precipitation of graphene oxide and iron source solution with phosphoric acid, ammonium phosphate or ammonium dihydrogen phosphate, and reacting obtained composite material with lithium carbonate and glucose.

FENG H

Use of Smilax miltiorrhiza root extract in preparation of anti-ultraviolet finishing agent, where cinnamic acid modified nano-titanium dioxide graphene composite is used as main anti-ultraviolet component.

FENG H, WU J, LAN W, CHEN Y, XING R, WANG D, MAO L, YU H, FU H, YANG B