国家/地区 中国（7）
IPC部 H（3） C（2） G（2）
IPC大类 H01（3） G01（2）
IPC小类 H01L（3） G01L（2）
IPC H01L033/00（3） H01L033/44（3） G01L001/24（2）
G01L011/02（2） H01L033/22（2）
发明人 GE Y（7）
公开年 2017（7）
申请年 2016（5）  2017（2） 
专利权人 HC SEMITEK Z.（3） UNIV NANJING.（2）

Multifunctional modified aqueous polyurethane coating material comprises diisocyanate, polyether polyol, hydrophilic chain extender, phosphorus-nitrogen synergistic flame retardant, neutralizing agent and graphene oxide.

GU L, ZHANG L, GE Y, XUE W, YU Q

Graphene fiber pressure sensor, has light fiber whose end part is formed with concave cavity, and graphene film covering end fixed on concave cavity, where concave cavity and graphene film are formed on Fabry-Perot cavity.

GE Y, ZHANG P, ZHAO W

LED chip has P-type electrode that is provided on graphene film layer, and titanium dioxide nanorods that are arranged in array manner on graphene film layer, and whose outer surface is provided with multiple silver nanoparticles.

DING T, GE Y, GUO B, HU J, LI P, LV M

Graphene fiber pressure sensor arranged in pressure measuring device, is arranged with optical fiber whose end portion is provided with concave cavity that is covered via graphene film to form Fabry-Perot cavity.

GE Y, ZHANG P, ZHAO W

Preparation method of epitaxial wafer of light emitting diode, involves growing zinc oxide (ZnO) nano cone layer on graphene layer and silver nanoparticle layer is grown on ZnO nano-cone layer.

DING T, GE Y, GUO B, HU J, LI P, LV M

Light-emitting diode chip contains substrate, undoped aluminum nitride buffer layer, undoped gallium nitride layer, N-type gallium nitride layer, multi-quantum well layer, graphene film layer and titanium dioxide nanorods.

DING T, GE Y, GUO B, HU J, LI P, LV M

Preparation of titanium dioxide/reduced graphene oxide/carbon nitride composite electrode involves forming double layer on fluorine doped tin oxide substrate by hydrothermal reaction and spin-coating graphene layer and carbon nitride.

FAN W, GE Y, BAI H, LI C, GUAN P