国家/地区 美国（5） 中国（2）
IPC部 H（5） B（3）
IPC大类 H01（5） B82（3）
IPC小类 H01L（5） B82Y（3）
IPC B82Y030/00（2） B82Y040/00（2） H01L021/02（2）
H01L021/768（2） H01L029/06（2）
发明人 GRILL A（5）
公开年 2013（3） 2012（2）
申请年 2012（5）
专利权人 INT BUSINESS.（5）

Method for forming interconnect structure for integrated microelectronic circuit, involves transferring graphene from copper foil, and patterning graphene, so that edges are coincided with vertical sidewall surfaces of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Semiconductor structure for semiconductor device, has substrate, graphene layer and double layer gate dielectric having alternate lamination of silicon nitride layer and hafnium oxide layer.

DIMITRAKOPOULOS C D, FARMER D B, GRILL A, LIN Y, NEUMAYER D A, PFEIFFER D, ZHU W, DIMITRAKOPOULOS C

Crystalline structure for silicon carbide layer, includes graphene layer that is located directly on crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L

Semiconductor structure has semiconductor substrate comprising single crystalline silicon-containing semiconductor material, semiconductor carbide layer and graphene layer including graphene monolayers.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, SUNG C