国家/地区 美国（5） 韩国（3） 欧洲专利局（EPO）（2）
IPC部 H（5） C（3） B（2）
IPC大类 H01（5） C01（3） B82（2）
IPC小类 H01L（5） C01B（3） B82Y（2）
IPC H01L029/16（5） H01L029/778（4） H01L029/78（4）
H01L029/66（3） H01L029/786（3） C01B031/04（2）
发明人 HEO J（5）
公开年 2014（3） 2015（2）
申请年 2014（5）
专利权人 SAMSUNG ELEC.（5）

Inverter e.g. vertical-type inverter, has second transistor that includes second channel unit including second graphene layer and n-type second two-dimensional (2D) semiconductor layer contacting second graphene layer.

HEO J, PARK S, SHIN H, HEO J S, PARK S J, SHIN H J

Method for fabricating graphene electronic device i.e. FET, of radio frequency device, involves exposing graphene layer in channel formation region by wet etching metal protection layer and metal layer using photoresist pattern.

HEO J, CHUNG H, SEO S, LEE S, YANG H

Graphene device has insulating layer which is provided between graphene layer and gate electrode, and semiconductor substrate is provided with tunable Schottky barrier formed by junction of source electrode, graphene layer and substrate.

CHUNG H, SEO D, PARK S, BYUN K, SONG H, YANG H, HEO J, CHUNG H J, PARK S J, BYUN K E, SONG H J, YANG H J, HEO J S

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Transistor i.e. field effect transistor, has channel made of graphene, where graphene includes structure of carbon atoms partially substituted with boron atoms and nitrogen atoms and graphene includes band gap.

LEE S, SEO S, WOO Y, CHUNG H, HEO J