国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（3） C23（3）
IPC小类 C01B（3） C23C（3）
IPC C01B031/04（3） C23C016/26（2）
发明人 HUANG L（6）
公开年 2011（4） 2010（2）
申请年 2010（6）
专利权人 CHINESE ACAD.（3） CHINESE ACAD.（2） UNIV SHANGHA.（2）

Preparation of regular graphene by chemical gas phase deposition involves placing metal foil or substrate with metal catalyst in reactor without oxygen and water, raising temperature of metal foil or substrate, and adding carbon source.

WU B, HUANG L, GENG D

Preparing silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature.

GAO H, PAN Y, GAO M, MAO J, HUANG L, ZHOU H, WANG Y, GUO H, DU S

Manufacture of graphene involves adding iron catalyst into oxygen-free reactor, supplying gas carbon source into reactor and reacting.

LIU H, LIU Y, XUE Y, WU B, YU G, GUO Y, CHEN J, HUANG L, GENG D

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G

Preparation of reduction-oxidation graphene by laser irradiation method comprises adding polar solvent to container, preparing polar oxidized graphite solution, adjusting pH, irradiating the oxidized graphite solution to obtain graphene.

LIU Y, HUANG L, JI L

Preparation of graphene-modified metallic foam materials comprises placing metallic foam materials in vacuum tube-type furnace, sintering in non-oxidation air, and carrying out chemical vapor deposition to deposit graphene.

LIU Y, XUE Y, WU B, YU G, CHEN J, HUANG L