国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（4） C23（2）
IPC小类 C01B（4） C23C（2）
IPC C01B031/04（4）
发明人 HUANG L（6）
公开年 2011（6）
申请年 2010（4）  2011（2） 
专利权人 CHINESE ACAD.（3） CHINESE ACAD.（3）

Preparation of graphene comprises putting substrate containing copper in anhydrous anaerobic reactor, heating at certain substrate temperature, annealing, and introducing carbon source to reactor.

CHEN J, GENG D, GUO Y, HUANG L, LIU Y, WU B, XUE Y, YU G

Preparation of graphene for conductive electrode or graphene device, involves warming substrate in non-oxide environment, filling carbon source and hydrogen in the reactor, reacting on the substrate by chemical vapor deposition, and cooling.

LIU Y, XUE Y, WU B, YU G, CHEN J, HUANG L, GENG D

Preparation of regular graphene by chemical gas phase deposition involves placing metal foil or substrate with metal catalyst in reactor without oxygen and water, raising temperature of metal foil or substrate, and adding carbon source.

WU B, HUANG L, GENG D

Preparing silicon intercalated epitaxial monolayer graphene comprises growing large scale high-quality graphene on metal surface, depositing silicon on the prepared epitaxial graphene and annealing to high temperature.

GAO H, PAN Y, GAO M, MAO J, HUANG L, ZHOU H, WANG Y, GUO H, DU S

Manufacture of graphene involves adding iron catalyst into oxygen-free reactor, supplying gas carbon source into reactor and reacting.

LIU H, LIU Y, XUE Y, WU B, YU G, GUO Y, CHEN J, HUANG L, GENG D

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G