国家/地区 世界知识产权组织（6）
IPC部 C（6） B（3）
IPC大类 C01（6） C23（5） B82（2）
C30（2）
IPC小类 C01B（6） C23C（5） B82Y（2）
C30B（2）
IPC C01B031/04（5） C23C016/26（4） C23C016/02（3）
B82Y040/00（2） C23C016/50（2）
发明人 JIANG M（6）
公开年 2012（4）
申请年 2011（2）  2012（2） 
专利权人 SHANGHAI INS.（6） CHINESE ACAD.（5）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Rapid thermal processing method for preparing graphene powder in air atmosphere comprises putting precursor of graphene in non-sealing cover crucible, then carrying out heat treatment to obtain graphene powder.

DING G, JIANG M, LI X, SUN J, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X