国家/地区 中国（5） 韩国（5） 美国（5） 日本（2）
IPC部 H（4） B（2） C（2）
IPC大类 H01（4） B82（2） C01（2）
C23（2）
IPC小类 H01L（4） B82Y（2） C01B（2）
C23C（2）
IPC B82Y030/00（2） B82Y040/00（2） C01B031/02（2）
C01B031/04（2） C23C016/26（2）
发明人 KANG S（5）
公开年 2011（2）
申请年 2010（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（5）

Image sensor comprises substrate including multiple photoelectric conversion elements, variable filter layer provided on substrate, and multiple micro lenses provided on variable filter layer, which comprises multiple first electrodes in first direction, and having first width in second direction.

JOE I, LEE K, KANG S, JANG M, CHANG M, KANG S K, LEEKWANGMIN, CHO I S, CHO I, LI G

Semiconductor device e.g. NAND flash memory device, has gate layers stacked in vertical direction perpendicular to upper surface of substrate and spaced apart from each other on pattern layer, and memory vertical structure penetrating through gate layers in direction.

YANG H, KANG S

Thin film transistor (TFT) for use in display apparatus, has graphene pattern which is formed between semiconductor layer and source electrode or drain electrode.

LEE Y, KHANG Y, YU S, KANG S, YONG S L, YOON H K, SE H Y, SU H K, RYU S, KHANG Y H

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H