国家/地区 韩国（8） 美国（2）
IPC部 C（6） H（6） D（2）
IPC大类 H01（6） C01（3） C08（3）
C09（3） D01（2）
IPC小类 C01B（3） C09D（3） H01M（3）
D01D（2） D01F（2） H01L（2）
IPC C01B032/194（2） C09D001/00（2） C09D007/40（2）
C09D007/61（2） C09D007/65（2） D01D005/06（2）
D01F009/12（2） H01M004/36（2） H01M004/583（2）
发明人 KIM H（9）
公开年 2020（9）
申请年 2018（4）  2019（3）  2020（2） 
专利权人 PURITECH CO .（2）

Barrier film comprises base film and barrier layer provided on base film and containing metal oxide and phosphorus-containing compound to which graphene is bonded.

KIM H, KIM J H, SEUNG Y T, KIM H C

Interconnect structure for use in electronic device, has graphene-metal barrier arranged on substrate, where graphene-metal barrier includes graphene layers and metal particles on grain boundary of graphene layers and between layers.

SHIN K, KIM K, KIM H, SHIN H, LEE S, SHIN K W, KIM K B, MI K H, SHIN H J, LEE S H

Heat radiation coating composition useful for heat-resistant sheet, comprises chemically modified graphene, photocurable organic binder, conductive polymer, photoinitiator and organic solvent.

KIM Y C, KIM I S, IMSEONGTAEK, YEOM E, SUNGSOO L, KIM H

Production of graphene fiber-containing metal nanoparticles for e.g. gas sensor, involves forming gel fibers using graphene oxide dispersion, drying, and reducing obtained graphene oxide fiber-containing metal oxide with chemical agent.

PARK S Y, SU Y C, CHO Y J, CHO K, JIN K H, KYUNG L, KIM H, HUN C S, KIM Y S, KYOON S M, YOO J, JU S H

Silicon-based porous compound comprises silicon particles, structure surrounding silicon particles, structure includes multiple of pores, and pores are larger than silicon particles, precursor is selected from graphene, graphene oxide.

KIM H, SOHN M

Anode active material used for secondary battery e.g. lithium secondary battery, comprises lithium composite transition metal oxide particles comprising nickel, cobalt, and manganese, and coating portion comprising polymer and graphene.

KIM H, PARK S Y, LEE D J, RAM L, KON K T, JUNG W M

New substituted aminoacrylate polymer used for dispersant used in manufacture of graphene.

JONG B H, HAHN J H, HO K M, KIM H

Method for manufacturing semiconductor device i.e. silicon carbide MOSFET, involves depositing graphene oxide dispersion on dopant implanted semiconductor substrate, and removing deposited graphene oxide dispersion.

KIMSEONGJUN, SHIN H K, KIM H, KANG M J, SUNG M J, LEE N S

Fabricating nano/micro composite fiber for storing electrical energy by wet spinning aqueous dispersion of graphene or graphene/carbon nanotube to prepare a microfiber, bundling, heating, and sheathing with insulating material.

PARK S, SHIN M, KIM H, YEO C, CHO Y, CHO K