国家/地区 韩国（5） 美国（4） 中国（2）
IPC部 H（5） C（4）
IPC大类 H01（5） C23（3） C01（2）
IPC小类 H01L（5） C23C（3） C01B（2）
IPC C23C016/02（3） C23C016/455（3） H01L021/02（3）
C23C016/30（2） H01L029/16（2）
发明人 KIM H S（5）
公开年 2021（2）
申请年 2020（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（5）

Semiconductor memory device comprises substrate including active region defined by device separation film, where active region including first portion and second portions, second portions being on two opposite sides of first portion, bit line on substrate and extending across active region.

KIM H, KIM S H, LEE J E, JIN X, KIM S, LI J, KIM H S

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C

Graphene substrate useful in transistor as electronic device, comprises a substrate having an adhesion force, a graphene layer provided on the substrate and a dielectric layer provided on the graphene layer.

JEONG S J, KIM H S, KIM Y S, PARK S J, KIM H J, SEOL D H, YANG J H

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H