国家/地区 韩国（7） 美国（2）
IPC部 H（5） C（4）
IPC大类 H01（5） C01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B031/02（3）
发明人 KIM J H（8）
公开年 2014（8）
申请年 2012（5）  2013（3） 
专利权人 DH ENERGY E.（2） KOREA INST S.（2）

Semiconductor device for use in e.g. portable communication apparatus, has electrode structure including lower electrode with metal pattern to confine heating pattern, and graphene pattern interposed between metal and heating patterns.

KIM E S, SEO J W, KIM J H

Structure, useful for forming graphene layer useful in e.g. high-speed semiconductor, comprises highly oriented pyrolytic graphite with an exposed surface, metal layer, coating layer, and support attached to surface of metal layer.

LEE Y S, KIM J H

Photoluminescence wavelength tunable material, useful in e.g. solar cell and LED, comprises composite comprising metal nanoparticles attached to graphene oxide to vary light emission characteristics of graphene oxide.

KIM J H, JUN S C, OH J Y, LEE S, LEE T, WOO D H, KIM S H, KIM C K, LIM J

Light emitting device, has electrode arranged on area of graphene layer that is formed on semiconductor layer, light emitting structure formed with another semiconductor layer, and active layer positioned between semiconductor layers.

KIM J H, KIM B J

Transition metal oxide-graphene nanocomposite material used as energy storage material for lithium secondary battery and lithium ion capacitor, comprises transition metal oxide active material, where transition metal is tin or nickel.

KIM K B, KIM H K, KIM J H, LEE D H

Optical switch used in optoelectronic and computing device, has pump light source which controls permeability of incident light through graphene layer, such that irradiated incident light is selectively irradiated into graphene layer.

KIM J H, KIM D G, JUN S C, LEE J S, LEE S, WOO D H, LEE T J, KIM C K, LEE H J

Graphene roll film has graphene film having wrinkle portion having specified width and central line average roughness, provided in base material.

YAMADA T, HASEGAWA M, TSUKAHARA N, SHIMADA N, YAZAWA K, KIM J H

Apparatus for forming graphene layer used in manufacture of nanoscale graphene semiconductor device, has graphite segment separated from support stand by relative motion, and substrate that is adhered to the separated graphite segment.

LEE Y S, KIM J H