国家/地区 中国（9）
IPC部 H（6） B（5） C（4）
IPC大类 H01（6） C08（4） C09（4）
B82（3） B32（2） C01（2）
C23（2）
IPC小类 C08K（4） B82Y（3） C09D（3）
H01L（3） B32B（2） C01B（2）
C08L（2） C23C（2） H01M（2）
IPC B32B027/20（2） B82Y040/00（2） B82Y099/00（2）
C01B031/02（2） C01B031/04（2） C08K003/04（2）
C08L101/00（2） C09D007/12（2） C23C026/00（2）
H01L021/336（2） H01L029/10（2） H01L029/66（2）
H01L029/78（2） H01L029/786（2） H01M004/02（2）
发明人 KIM J S（9）
公开年 2013（2） 2014（2） 2023（2）
申请年 2012（2）  2013（2）  2022（2） 
专利权人 POSCO（3） SAMSUNG ELEC.（3） SK ON CO LTD（2）

Polymer layer derived composition useful in a display device, comprises e.g. polyborondimethylsiloxane, benzoyl peroxide, fumed silica, glass fibers, glass powder, carbon nanotubes, graphene oxide, carbonyl iron, calcium carbonate, zinc oxide, silicone elastomer and polydimethylsiloxane.

HWANG S, LEE J, WU X, KIM J, KIM Y, SHIN H, YU W, YU W R, SHIN H J, SONG K Y, KIM J S, OH H J

Anode active material used in lithium secondary battery, comprises core portion comprising solid electrolyte and shell portion encapsulating core portion and comprising silicon-based active material.

CHUNG J H, KIM J S, PARK G O, PARK G, KIM J, ZHENG Z

Anode active material for lithium secondary battery used as power source for environmentally friendly vehicle e.g. hybrid vehicle, in which silicon oxide is provided with carbon coating layer formed on surface of silicon oxide and doped with magnesium.

PARK G O, CHUNG J H, KIM J S, PARK E J, JANG D I, KIM J, JANGDONGIL, ZHANG D, PIAO E, JIN J, ZHENG Z, PARK G

New non-covalent modified carbon structure e.g. carbon nanotubes, graphene and graphene nanoplatelets used in manufacture of carbon structure/polymer complex composite.

JUNG Y, YOO H J, KIM J, KIM J S, BYEON C, JUNG Y G, BYEON C S, LIU H

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Surface-treated steel sheet comprises a steel sheet substrate and graphene containing polymer resin layer at the upper part of the steel sheet substrate.

KIM J K, YUN H C, YOO H J, KIM J S, JUNG Y G, KIM J, YUN H, YOO H, JUNG Y, LIU H

UV light-emitting diode comprises n-type semiconductor layer, active layer on n-type semiconductor layer, p-type semiconductor layer of aluminum gallium nitride on active layer, and p-type graphene layer on p-type semiconductor layer.

HWANG S, KO G, SIM S, KIM J, CHUNG H, SONE C, HYEON S S, JAE J H, SEOP K J, SU S C, WON H S, U KOH G, JEONG H, KO K, SHIM S, SON C, HWANG S W, KO G W, SIM S H, KIM J S, CHUNG H J, SONE C S

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R

Quantum interference transistor has graphene sheet including several channel formed between source and drain, and gate formed at channel, such that predefined number of path differences are formed between source and drain.

CHUNG H, HONG K, KIM J, SEO S, SHIN J, SHIN J K, SEO S A, HONG K H, CHUNG H J, HONG G, JEONG H, JIN Y G, JUNG H J, KIM J S, JUNG H