国家/地区 韩国（6） 世界知识产权组织（2）
IPC部 G（5）
IPC大类 G03（3） G01（2）
IPC小类 G03F（3） G01N（2）
IPC G01N027/30（2） G01N027/414（2） G03F001/22（2）
G03F001/62（2）
发明人 KIM K S（6）
公开年 2022（5）
申请年 2020（6）
专利权人 FINE SEMITEC.（3） KUMOH NAT IN.（2） MCK TECH CO .（2）

Porous pellicle frame for extreme ultraviolet lithography, has second frame that is provided with second inner surface and second outer surface in contact with first outer surface.

KIMCHUNG, YU L, CHO S J, KIM K S, LEE S Y, SEO K, MOON S Y, CHOI J H, KIM J K

Method for manufacturing pellicle for extreme ultraviolet lithography, involves forming catalyst layer over silicon substrate, forming graphene layer over catalyst layer, and forming capping layer over side of graphene layer.

YU L, CHO S J, KIM K S, KIMCHUNG, SEO K, CHOI J H, MOON S Y, KIM J K

Producing pellicle, useful for extreme ultraviolet lithography, involves e.g. forming primary capping layer on one surface of substrate, forming bonding layer comprising amine group on primary capping layer, and forming core layer.

YU L, CHO S J, KIM K S, SEO K, MOON S Y, KIM J K

Reference electrode for ion measurement sensor, has graphene containing fluorine functional group treated with fluorine-benzene, and graphene is non-oxidized graphene or reduced graphene oxide.

CHO S M, CHO M G, KIM K S, OH H G, SONG K S, JO D A, CHO H S, CHO M, OHHONGGI, DAAE J, HAESHIN J

Composite material manufacturing method, involves determining appropriate range of process by identifying shear rate occurring inside compression nozzle, and performing temperature, pressure and injection speed control.

CHOI D Y, KIM K S, KIM J P

Two-dimensional structure sensor for an ion sensitive field-effect transistor, includes transistor that is formed with a substrate, which is formed with a source region and a drain region, where reference electrode is formed with graphene.

SONG K S, CHO S M, KIM K S