国家/地区 韩国（5） 世界知识产权组织（4） 美国（2）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3） B01（2）
IPC小类 C01B（3） H01L（3） B01J（2）
IPC H01L029/16（3） B01J003/06（2） B01J006/00（2）
B01J019/10（2） C01B031/04（2） C01B031/06（2）
H01L021/02（2）
发明人 KIM M（6）
公开年 2016（4） 2017（2）
申请年 2016（6）
专利权人 ILJIN DIAMON.（2） UNIV SEOUL N.（2）

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce unreacted graphite, immersing sintered component in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce component containing unreacted graphite, immersing in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Method for manufacturing electronic component, involves forming carrier layer on graphene layer, transferring graphene layer on substrate, and removing catalyst metal layer from lower-side of graphene layer.

KIM K, KIM M, KIM K B, KIM K J, KIM M S

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S

Transistor used in display device has active layer pattern which includes graphene and semiconductor oxide, disposed on portion of gate insulating layer, source and drain electrodes.

LEE J, KIM M

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S