国家/地区 韩国（6） 美国（3） 世界知识产权组织（2）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（3）
IPC H01L029/16（3） H01L021/02（2）
发明人 KIM M（7）
公开年 2016（7）
申请年 2016（4）  2014（2） 
专利权人 UNIV SEOUL N.（3）

Method for manufacturing electronic component, involves forming carrier layer on graphene layer, transferring graphene layer on substrate, and removing catalyst metal layer from lower-side of graphene layer.

KIM K, KIM M, KIM K B, KIM K J, KIM M S

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S

Transistor used in display device has active layer pattern which includes graphene and semiconductor oxide, disposed on portion of gate insulating layer, source and drain electrodes.

LEE J, KIM M

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Inductor for use in wearable electronic devices, has internal electrode including coil pattern containing graphene, sheet including surface on which internal electrode is arranged, and gap layer formed of magnetic material.

KIM M G, KIM M

Separator for electrochemical device, comprises graphene oxide nano-particles dispersed in polyfluorovinylidene-hexafluoropropylene copolymer coating layer provided at one or more sides of material.

CHOI Y A, KIM M, PARK J H

Method for manufacturing camphorsulfonic acid doped polyaniline or graphene composite film for flexible super capacitor electrode, involves processing oxide graphene graphite by chemical oxidation process.

JANG J, LEE C, KIM M