国家/地区 美国（10）
IPC部 H（7） C（6） B（4）
IPC大类 H01（7） B01（3） C01（3）
C02（2） C04（2）
IPC小类 H01L（6） C01B（3） H01M（3）
B01D（2） C02F（2） C04B（2）
H01B（2）
IPC H01L029/16（4） H01L029/10（3） H01L029/66（3）
B01D061/02（2） B01D067/00（2） B01D071/02（2）
C01B031/02（2） C01B031/04（2） C02F001/44（2）
H01B001/04（2） H01L029/06（2） H01L029/78（2）
H01L029/786（2） H01L031/0224（2） H01L031/042（2）
发明人 KIM S Y（10）
公开年 2017（2） 2021（2） 2022（2）
申请年 2017（2）  2021（2） 
专利权人 GWANGJU INST.（3） UNIST ACADIN.（2） UNIV EWHA IN.（2）

Production of carbon composite fiber used for e.g. aviation application, involves preparing spinning dope by dispersing carbon nanomaterial and polyamic acid in super acid, and imidizing preliminary fiber to obtain polyimide composite fiber.

KU B, KIM S Y, KIM S G, YOU N H, KIM J, HWANG J Y, KIM N D, KIM D, KOO B C, KIMRYAN, KIMSEOGYUN, KIM J W, DONG K, KIM D Y

Ceramic nanofiltration membrane comprises graphene oxide and polyethyleneimine are alternately coated on surface of ceramic nanofiltration membrane, where graphene oxide and polyethyleneimine allow carboxyl group and amine group to form covalent bond.

KOOK H, CHA M, KIM S, LEE M, PARK C, PARK C H, LEEMINJOO, KIM S Y

Semiconductor process wastewater treatment system used for removing ionic substances, has processing unit configured to receive semiconductor process wastewater and treat the semiconductor process wastewater through many operation and membrane filtration tank arranged separately from processing unit.

CHA M, KIM S, PARK C, AHN S, SEHYUK A, PARK C H, KIM S Y

Graphene semiconductor junction device comprises substrate, gate electrode, gate insulating layer, graphene layer, semiconductor layer, drain electrode, and source electrode on graphene layer to be separated from semiconductor layer.

KIM K Y, KIM S Y, LEE B H, KIM K

Prediction of life characteristics of secondary battery for e.g. robots, involves e.g. charging and discharging of target secondary battery containing carbon-based hybrid negative electrode containing carbon-based negative active material.

YOON H J, KIM S Y, SUNG K W, LEE E J, YOON H, KIM S, SUNG K, LEE E, LI E, CHENG Q, JIN S, YIN X

Graphene-based ternary barrister, has gate electrode layer formed on center of substrate, source electrode layer arranged to two sides of graphene channel layer, and drain electrode layer arranged to two sides of source electrode layer.

LEE B H, SHIM C H, KIM Y J, KIM S Y

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Graphene sheet comprises lower sheet containing layers of graphene and ridge, which is formed on lower sheet, and includes larger number of layers of graphene than lower sheet.

KWON S, KIM S Y, PARK K, KWAK J, CHU J H, CHOI J K, PARK K B, KWAK J S, JOO J, KIM H, CHOE J

Graphene sheet used for transparent electrode for e.g. display device, has lower sheet including layers of graphene and ridge formed on lower sheet and includes more layers of graphene.

KWON S, PARK K, KIM S, KWAK J, KWON S Y, KIM S Y, KWAK J S, KIM H