国家/地区 韩国（6） 美国（4） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（6） B（4）
IPC大类 H01（6） B82（3）
IPC小类 H01L（6） B82Y（3）
IPC H01L029/786（5） H01L029/78（4） B82Y040/00（3）
B82Y099/00（3） H01L021/336（3） H01L029/16（3）
H01L029/778（3） H01L021/683（2） H01L029/417（2）
H01L029/423（2） H01L029/66（2）
发明人 KIM Y S（6）
公开年 2013（6）
申请年 2012（4）  2013（2） 
专利权人 SAMSUNG ELEC.（5）

Manufacturing method of graphene carbon material electric component e.g. thin-film transistor, involves forcing graphene oxide layer in post heat cycle for forming integrally drain and source electrodes and channel layer in same plane.

KIM Y S, CHOI H S, LEE G H

Semiconductor light emitting device e.g. LED has transparent electrode which is made of graphene layer and contact layer, and active layer which is formed between n-type and p-type nitride semiconductor layers.

SHIM H W, KIM Y S, KIM S T

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Method for manufacturing graphene device, involves forming device portion on first substrate, which is provided with graphene layer and attaching second substrate onto device portion and removing first substrate.

LEE C, LEE J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, MOON C Y, MUN Z R

Transistor e.g. three-dimensional graphene channel transistor used in semiconductor device, has channel layer that is provided to cover both side surfaces and top surface of gate, and channel layer is provided with graphene.

LEE C, LEE J, KIM J, KIM Y, MOON C, LEE C S, LEE J H, KIM Y S, KIM J S, MOON C Y, MUN Z R

Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.

LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J