国家/地区 韩国（5）
IPC部 G（5）
IPC大类 G03（5）
IPC小类 G03F（5）
IPC G03F001/62（4） G03F001/22（3）
发明人 LEE C（5）
公开年 2022（3）
申请年 2020（3）  2019（2） 
专利权人 S S TECH CO LTD（5）

Pellicle for extreme ultraviolet lithography, has shadow mask layer pattern that is formed between support layer pattern and central layer by etching mask layer formed between central layer and support layer by using pattern as etch mask.

LEE C, HONG J H, JEONG M W, PARK C G, YUN J W, LEESEUNGJO, KIM J, LEE H

Pellicle used for extreme ultraviolet lithography, comprises central layer formed on pellicle frame, and surface layer formed by heat treatment to include any one or more elements of carbon, nitrogen and oxygen on outside of central layer.

SHIN C, LEE C, HONG J H, YUN J W, PARK C G, LEESEUNGJO, KIM J, LEE H

Pellicle for extreme ultraviolet lithography, comprises pellicle portion that is provided with central layer, where central layer is formed on pellicle frame and multiple capping layers are formed outside central layer.

SHIN C, LEE C, HONG J H, YUN J W, PARK C G, LEESEUNGJO, KIM J, LEE H

Pellicle attached to a photomask used in an EUV lithography process for use in preventing cracking and destruction of a thin film, comprises a core layer, and a support layer pattern that supports the pellicle portion from a lower portion.

NAM K S, LEE C, HONG J H, KIM J

Pellicle used for extreme UV-lithography, comprises two-layer film containing graphene, silicon, silicon and silicon nitride, silicon and silicon carbide, silicon and molybdenum silicon, and has preset transmittance, and thickness.

NAM K S, LEE C, HONG J H, YUN J W