国家/地区 欧洲专利局（EPO）（13）
IPC部 H（12） B（5） C（3）
IPC大类 H01（12） B82（5） C01（3）
IPC小类 H01L（6） B82Y（5） H01M（5）
C01B（2）
IPC B82Y040/00（5） H01M004/36（5） H01M004/62（5）
H01M010/052（5） B82Y030/00（3） H01L029/06（3）
H01M004/02（3） H01M004/13（3） H01M004/38（3）
H01M004/66（3） H01M010/0525（3） C01B031/04（2）
H01L021/02（2） H01L021/36（2） H01L029/16（2）
发明人 LEE D（13）
公开年 2022（3） 2012（2） 2018（2）
申请年 2021（3）  2011（2）  2014（2）  2017（2） 
专利权人 SAMSUNG ELEC.（6） KUMOH NAT IN.（3） AN S（2） KIM S（2）
LEE D（2） LG ENERGY SO.（2） LG SILTRON I.（2） SK SILTRON C.（2）

Semiconductor device for use in electronic apparatus, has source/drain structure including silicide film to be formed between first semiconductor region and first electrode, and conductive barrier to be formed.

KIM C, NAM S, SHIN K, LEE D, LI D, JIN C, NAM S G, SHIN K W, LEE D H

Electrode used in lithium battery, has electrode active material layer that is measured by surface and interfacial cutting analysis system (SAICAS), and ratio of change of vertical relative force (FVR) between first and second points.

LEE D, NAM H, NAM J, KWON I, LEE J, LEE J H, NAM J H, LEE D K, KWON I K, LEE D G, LI D, NAN C, QUAN Y

Active material used for positive electrode of lithium secondary battery, is made of nickel-based lithium transition metal oxide, and comprises at least one secondary particles comprising aggregate of primary macroparticles, and coating layer comprising carbon material.

DO J, LHO E, PARK K, HAN G, KWAK M, PARK S, LEE D, LEE S, JUNG W, LHO E S, PARK K J, MIN K, PARK S M, LEE D J, LEE S O, JUNG W M, ZHENG W, LI S, LI D, HAN J, PARK G

Positive electrode used for lithium-sulfur battery, comprises current collector and positive electrode active material layer arranged on surface of current collector, where positive electrode active material layer comprises positive electrode active material and additive.

LEE D, KIM T G, UK L D, JIN Z, LI D

Cathode pole piece for use in electrochemical device, has first cathode framework layer located between current collector and second layer, where porosity of first layer is greater than that of second layer.

XIE Y, LI D, CHEN M, LEE D, XIE Y S

Optical sensor comprises first electrode, graphene quantum dot layer, graphene quantum dot layer which comprises multiple of first graphene quantum dots which are bonded to first functional group and multiple of second graphene quantum dots.

LEE J, SHIN H, LEE D, PARK S, LEE K, LEE E, JO S, HEO J, LEE G, LI Y, ZHAO C, HUH J, LEE J H, SHIN H J, LEE D W, PARK S J, LEE K Y, LEE E K, JO S H, HEO J S

Heat dissipation structure using graphene quantum dots, has heat dissipation film which is placed on heating element to dissipate heat generated from heating element, to outside.

LEE D, KIM S, SEOL M, JEONG S, NAM S, PARK S, SHIN H, XUE M, ZHENG C, NA S, LEE D W, KIM S W, SEOL M S, JEONG S J, NAM S G, PARK S J, SHIN H J

Anode material for secondary battery used in electronic device has graphene foam structure that includes graphene frames connected to each other, and nanostructures in pores of graphene foam structure.

SHIN H, LEE D, PARK S, SHIN H J, LEE D W, PARK S J

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H