国家/地区 韩国（6） 美国（6） 欧洲专利局（EPO）（4） 日本（3） 世界知识产权组织（3） 中国（2）
IPC部 H（7） B（2）
IPC大类 H01（7） B82（2）
IPC小类 H01J（3） H01L（3） B82Y（2）
IPC H01J001/30（3） H01J001/304（3） H01J009/02（3）
B82Y040/00（2） H01J001/308（2） H01L021/02（2）
H01L021/36（2） H01L029/06（2） H01L033/00（2）
H01L033/02（2） H01L033/12（2）
发明人 LEE D G（7）
公开年 2015（3） 2012（2） 2022（2）
申请年 2014（3）  2011（2） 
专利权人 KUMOH NAT IN.（5） SAMSUNG ELEC.（3） AN S（2） KIM S（2）
KUMOH NAT IN.（2） LEE D（2） LG SILTRON I.（2） SK SILTRON C.（2）

Electrode used in lithium battery, has electrode active material layer that is measured by surface and interfacial cutting analysis system (SAICAS), and ratio of change of vertical relative force (FVR) between first and second points.

LEE D, NAM H, NAM J, KWON I, LEE J, LEE J H, NAM J H, LEE D K, KWON I K, LEE D G, LI D, NAN C, QUAN Y

Ternary logic device has first transistor and second transistor that are connected in parallel to form ternary logic element that implements logic state, and heterojunction-based multilayer channel is formed by sequentially stacking lower semiconductor material layer.

LEE K Y, JANG H, LEE D G, LEE B H

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Field emission device for use in lighting apparatus, has electron emission source that comprises multiple graphene thin films that are vertically supported in cathode electrode toward opening.

JEONG T, KIM I, KIM Y, LEE D, PARK S, LEE D G, PARK S H, KIM Y C, KIM I H, JEONG T W

Field emission device for electronic apparatus has insulating spacer that forms opening that is path of electrons emitted from electron emission source, and gate electrode with graphene sheet that covers opening.

LEE D, PARK S, KIM Y, LEE C, KIM D, LEE D G, PARK S H, KIM Y C, LEE C S, KIM D Y

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S