国家/地区 韩国（6） 美国（4）
IPC部 H（6） C（3） G（2）
IPC大类 H01（6） C23（3） C01（2）
G02（2）
IPC小类 H01L（4） C23C（3） C01B（2）
G02F（2） H01M（2）
IPC C23C016/02（3） C01B032/186（2） C23C016/26（2）
C23C016/513（2） H01L021/285（2）
发明人 LEE E（7）
公开年 2021（4） 2022（2）
申请年 2020（7）
专利权人 SAMSUNG ELEC.（5） UNIV SUNGKYU.（3）

Positive electrode slurry composition used for manufacturing positive electrode for secondary battery, comprises cathode active material, conductive material, binder made of copolymer of polyvinylidene fluoride and low boiling point/non-aromatic solvent.

CHOI S H, LEE E, PARKHYEMIN, WU M H, WOOK K D, KANG Y

Carbon support electrode used for vanadium redox flow battery, has porous plate-like carbon fiber support having first surface and second surface facing each other, and ion adsorption layer, which includes conductive carbon.

LEE E, KIMDOHUN, YOUNG J, KIM E C

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Light detecting device for use in optical system, has graphene layer for absorbing portions of light transmitted in waveguides, and first electrode and second electrode electrically connected to graphene layer, respectively.

LEE E, CHOI B, GU T, WHANG D

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Light detecting device for use in an optical system, comprises a light input device for receiving light, multiple waveguides extending from the light input device, and a first electrode and a second electrode are electrically connected to the graphene layer.

WHANG D, GU T, CHOI B, LEE E, KYEONG L E, CHOI B L, GU T J, WHANG D M, CUI B, HWANG T

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J