国家/地区 韩国（14） 美国（5） 中国（4） 世界知识产权组织（4）
IPC部 C（10） H（10） B（3）
A（2） G（2）
IPC大类 H01（10） C01（8） A61（2）
B82（2）
IPC小类 C01B（8） H01L（7） A61B（2）
B82Y（2） H01B（2） H01G（2）
IPC C01B031/04（8） B82Y030/00（2） B82Y040/00（2）
H01B013/00（2） H01G011/32（2） H01L051/00（2）
发明人 LEE H（16）
公开年 2016（16）
申请年 2015（9）  2014（4）  2016（3） 
专利权人 UNIV SUNGKYU.（7） BASIC SCI IN.（3） GRAPHENEALL .（2） UNIV SEOUL N.（2）

Producing surface modified graphene transparent electrode useful for device, comprises e.g. coating nitrogen-doped graphene on upper surface of three-dimensional substrate comprising substrate or concavo-convex portion.

LEE H

Graphene-silicon composite used in electrical device e.g. secondary battery and capacitor, comprises graphene sheet comprising single or several graphene layers, and silicon-containing layer formed on graphene layers.

KIM D, LEE H

Graphene bioelectronic device used in endoscope, consists of graphene composite layer comprising two or more graphene layers.

KIM D, HYEON T, CHOI S, LEE H, SONG C, LEE Y

Biosensor e.g. humidity sensor and pH sensor, consists of sensing unit including graphene layer, bridge unit connected to sensing unit, and electrode unit connected to bridge unit.

KIM D, HYEON T, CHOI S, LEE H, CHOI T

Producing reduced porous graphene oxide, comprises e.g. treating graphene oxide in a first microwave under basic atmosphere to obtain carbonate generate graphene oxide, and removing the generated carbonate from the graphene oxide.

KIM D, LEE H

Transparent graphene electrode for use in transparent ultra-capacitor, has polymer layer formed by autopolymerizing monomer on surface of first graphene layer, and second graphene layer formed on polymer layer.

JO K, KIM K, KIM S, LEE S, KIM J, LEE H, LEE S M, KIM J H, LEE H J, ZHAO J, LI C

Manufacturing graphene quantum dot involves mixing acid and graphene oxide and subjecting mixture to hydro-thermal treatment to obtain graphene quantum dot.

CUI P, LEE H

Power distribution box comprises cover containing polyethylene resin, phenolic resin, elastomer, graphene, silicon carbide, silane coupling agent, semi-reinforcing furnace black, calcined clay and nano-molybdenum disulfide.

AN H, LEE H, SUN W, YAN G, CHEN Y, BU N, SHENG W, GUO J

Method for manufacturing graphene quantum-dot thin film used in carbon-based thin film transistor, involves evaporating solution containing graphene quantum dot and depositing thin film of graphene quantum dot on base material.

LEE H, SEO S, YOON Y

Transferring graphene layer, comprises e.g. producing self-assembled monomolecular layer on first substrate, producing adhesive layer and supporting layer on monomolecular layer, and removing first substrate and monomolecular layer.

LIM J T, LEE H, LEE J I, CHU H Y, KWOM B H, MOON J, KIM J Y, YU B G, HAN J H