国家/地区 美国（8） 韩国（7） 中国（4） 日本（3）
IPC部 H（6） B（5） C（4）
IPC大类 H01（6） B82（5） C01（4）
C23（2）
IPC小类 B82Y（5） H01L（5） C01B（4）
C23C（2） H01M（2）
IPC B82Y040/00（3） C01B031/02（3） B82Y030/00（2）
B82Y099/00（2） H01L029/78（2） H01L033/04（2）
H01L051/00（2）
发明人 LEE J（8）
公开年 2012（7）
申请年 2011（8）
专利权人 SAMSUNG ELEC.（4） KOREA INST S.（2） SAMSUNG LED .（2） SNU R DB FOU.（2）
UNIV SEOUL N.（2）

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Random graphite, which is a type of graphite comprising three-dimensionally random graphene layers, useful for graphitic intercalation compound (GIC) such as electrodes for lithium-ion battery.

LEE J, WON J, LEE B, LEE J K, WON J S, LEE B B

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J

Dye-sensitized solar cell, has light absorption material provided with specific weight percent of light absorptiveness dye, carbon nanotube and specific weight percent of graphene or carbon black part.

LEE C, PARK C, CHONG C L, CHAN S P, LEE J

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Graphene quantum dot light emitting device comprises first graphene; graphene quantum dot layer disposed on the first graphene and containing graphene quantum dots; and second graphene disposed on the graphene quantum dot layer.

HWANG S, KO G, SIM S, CHUNG H, SONE C, LEE J, HONG B, BAE S, HWANG S W, KO G W, SIM S H, CHUNG H J, SONE C S, LEE J H, HONG B H, BAE S K

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J