国家/地区 韩国（6） 美国（6）
IPC部 B（5） H（4） C（3）
IPC大类 B82（4） H01（4） C01（3）
C23（2）
IPC小类 H01L（4） B82B（3） C01B（3）
B82Y（2） C23C（2）
IPC C01B031/02（3） B82B003/00（2） B82Y040/00（2）
发明人 LEE J（6）
公开年 2011（6）
申请年 2010（5） 
专利权人 SAMSUNG ELEC.（4） UNIV HANYANG.（3） UNIV HANYANG.（3） LEE J（2）

Resin plating comprises forming a graphene thin layer on a resin substrate and electroplating the resin substrate having the graphene thin layer formed on it.

BAE A H, SON S I, NAM J D, LEE J H, HWANG T S, OH J S, LEE H, EAH H B, SANG I S, JAE D N, JOON S O, JUN H L, TAE S H, HWANG T, LEE J, NAN J, PAE A, SUN S, OU J

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Electronic device e.g. solar cell comprises substrate, stacked structure including sheet-shaped graphene thin film between insulators, electrode over structure and one insulator, and bottom electrode between substrate and structure.

KIM T, PARK W, SON D, SHIM J, LEE J, JUNG J, KIM T W, SON D I, PARK W I, JUNG J H, SHIM J H, LEE J M

Fabricating graphene ribbons involves preparing carbon structure in which graphene ribbon is spirally grown, revealing tube shape; and applying energy to unroll the graphene helix into the graphene ribbons.

LEE J, LEE K, LEE S, KAP L J, LEE K I, LEE S H

Optical detector for e.g. health care application, has nanoparticle layer formed on sheet-shaped graphene thin film and patterned to define electrode region of thin film, where nanoparticles are formed in nanoparticle layer.

KIM T, JUNG J, SON D, LEE J, YANG H, PARK W, KIM T W, JUNG J H, SON D I, LEE J M, YANG H Y, PARK W I

Manufacture of electronic device e.g. light emitting device, involves coating polymer solution with distributed nanoparticles on substrate, drying, attaching obtained polymer thin film and graphene thin film and forming top electrode.

KIM T, PARK W, SON D, YANG H, LEE J, JUNG J, KIM T W, JUNG J H, SON D I, LEE J M, YANG H Y, PARK W I