国家/地区 韩国（9） 美国（4） 中国（3） 欧洲专利局（EPO）（3） 日本（3） 台湾（3） 世界知识产权组织（3）
IPC部 C（7） H（6） B（3）
IPC大类 C01（6） H01（6） B01（3）
B82（2）
IPC小类 C01B（6） B01J（3） H01B（3）
H01G（3）
IPC C01B031/02（6） C01B031/04（5） B01J019/24（2）
C01B032/182（2） C01B032/184（2） C01B032/194（2）
H01B001/04（2） H01B013/00（2） H01G011/86（2）
发明人 LEE J S（9）
公开年 2015（9）
申请年 2014（7）  2013（2） 
专利权人 HANWHA CHEM .（3） KOREA ADVANC.（3）

Manufacture of self-adhesive photocatalyst film for ultraviolet ray-activated oxygen detector, involves coating photocatalytic nanoparticles with graphene oxide, and absorbing dye onto surface of coated photocatalytic nanoparticles.

LEE J S, LEE M A, PARK C B, SON E J, WON K

Producing graphene, comprises e.g. heating metal wire located on substrate into a chamber to form gaseous metal catalyst, injecting a carbon source gas into the chamber, and heating first portion of substrate using heated metal wire.

BAEK J W, JEON S W, LEE J S

Phosphor plate for use in LED element, has graphene layer formed in upper surface of phosphor plate body, and phosphor pattern layer formed between phosphor plate body and graphene layer that is made of graphene material.

IM W B, YOON H, LEE J S, SHIM H W

Alpha-ferric oxide-graphene inverse opal structure for fabricating electrode for water-splitting device, has three-dimensional-alpha-ferric oxide-graphene inverse opal laminated on substrate.

JANG J H, LEE J S

Method for manufacturing flexible super capacitor electrode by using three-dimensional graphene structures, involves coating binder on flexible substrate, metal oxide nanofiber with polyaniline film, and fixing initiator on substrate.

JANG J, LEE J S

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Graphene comprises oxygen atom content in predetermined range, and has carbon/oxygen weight ratio of predetermined range.

LEE J S, DO S H, JEON S Y, KONG J H, DO SEUNG H, LEE J, DO S, JEON S, KONG J

Manufacture of functionalized graphene used for e.g. barrier material, involves forming mixture using graphite oxide, solvent and functionalized compound containing sulfur and amino group, reacting, and recovering resultant graphene.

LEE J S, DO SEUNG H, JEON S Y, HAN G W, KONG J H, DO S H, LEE J, DO S, JEON S, HAN G, KONG J

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S