国家/地区 韩国（7）
IPC部 C（4） H（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4） H01B（2） H01L（2）
IPC C01B031/04（4） H01L035/34（2）
发明人 LEE J S（7）
公开年 2016（7）
申请年 2015（4）  2014（3） 
专利权人 UNIV SOOKMYU.（2）

Preparation of graphene involves heating reaction chamber provided with copper foil to graphene growth temperature in reducing atmosphere, growing graphene domain by supplying carbon source, forming lapping film, and cooling chamber.

LEE J S, KANG C

Controlling shape of graphene domain useful in e.g. electric devices, comprises e.g. disposing a copper foil in reaction chamber, heating for graphene growth, and forming a graphene domain by supplying carbon source.

LEE J S, KANG C

Semiconductive composition useful for producing power cable, comprises base resin, conductive material and graphene.

LEE J S, KONG J H, KIM K S, KIM D K, DO SEUNG H

Thermoelectric material comprises graphene having three-dimensional nano-foam structure, where thermoelectric material is produced by e.g. coating solution containing metal precursor and solid carbon on substrate with graphene, and heating.

JANG J H, LEE J S, THIYAGARAJAN P

Composite conductor for e.g. electric power transmission cable, has graphene coating layer formed on surface of conductor main body, where radius of conductor main body is about specific unit and is denoted as r.

PARK U K, LEE J S, KIM Y S, KIM J I, YOU S H

Device for measuring physical property of fluid, has measurement system that measures surface roughness of graphene thin film, and current supply system that adds optical energy to measurement target fluid accepted in holding space.

LEE J S, YOON H M, CHOI S B, BAIK S J, YEO J S, HAN J H

Thermoelectric material comprises silicon-doped graphene layer formed by substituting portion of carbon atoms of graphene by silicon atoms.

LEE J S, LEE C H