国家/地区 韩国（5） 美国（4） 欧洲专利局（EPO）（2）
IPC部 H（5） G（4） C（2）
IPC大类 H01（5） G11（2）
IPC小类 H01L（5） G11C（2）
IPC G11C013/00（2） H01L029/792（2） H01L045/00（2）
发明人 LEE M（7）
公开年 2021（6）
申请年 2020（7）
专利权人 SAMSUNG ELEC.（4）

Fabric-type pH sensor for monitoring pH and electrical conductivity of patient's skin, has insulating layer formed on working electrode, where insulating layers are formed on reference electrode and provided with insulators.

SO J, LEE M, YOOEUISANG, LIM D Y

Foldable display device e.g. in TV comprises e.g. heat dissipation substrate disposed on support substrate, including copper and their alloy and heat dissipation coating layer on surface of heat dissipation substrate, includes base resin.

LEE K H, CHOI S, LEE M

Two-dimensional (2D) material-based wiring conductive layer contact structure used in 2D material-based FET, comprises semiconducting 2D material wiring, conductive layer, and metallic 2D material layer in contact with semiconducting 2D material wiring and conductive layer.

LEE M, YOO M, SHIN H, SEOL M, SHIN H J, YOO M S, HYUN L

Semiconductor device i.e. fin FET, for use in e.g. memories, has channel layer formed on gate dielectric and comprising two-dimensional semiconductor material, and source electrode and drain electrode electrically connected to channel layer.

LEE M, SEOL M, CHO Y, SHIN H

Nonvolatile memory device comprises resistance switching layer configured to change resistance value based on illumination of light irradiated, and resistance switching layer configured to maintain changed resistance value.

LEE M, JANG H, HAM D, LIU C, HINTON H, KIM H, SHIN H, HYUN L, HAM D H, SHIN H J, JIN H, SHEN X, HINTON H J

Membrane structure of flat membrane or hollow fiber membrane form used for water treatment processing apparatus comprises a carbon nanomaterial and sodium (Na) super ionic conductor (NASICON)-series ceramic particles which are interwisted.

KANG S, PARK J, LEE M, SEONG P, YOUNG L M

Nonvolatile memory apparatus for e.g. phase-change random access memory, consists of electrode(s), resistive-change material layer, diffusion prevention layer comprising two-dimensional material, and blocking layer.

LEE M, PARK S, SONG H, SHIN H, KIM K, LEE S, KANG Y