国家/地区 欧洲专利局（EPO）（13）
IPC部 H（11） C（5） B（2）
IPC大类 H01（11） C01（4） C09（3）
IPC小类 H01M（6） H01L（5） C01B（3）
C09K（2） H01B（2）
IPC H01M004/62（5） H01M004/02（4） H01L029/16（3）
H01L029/24（3） H01L029/778（3） H01M004/36（3）
H01M004/583（3） H01M010/052（3） H01M010/0525（3）
C09K005/14（2） H01B001/24（2） H01L021/336（2）
H01L029/06（2） H01L029/10（2） H01L029/417（2）
发明人 LEE M（13）
公开年 2022（5） 2021（3） 2015（2） 2018（2）
申请年 2021（5）  2014（3）  2020（2） 
专利权人 SAMSUNG ELEC.（5） LG CHEM LTD（4） LG CHEM CO L.（2）

Cathode composition used for lithium secondary battery, comprises cathode active material comprising cathode active material particles having secondary particle shape and cathode active material particles having single particle shape, and conductive material including linear-type conductive material.

LEE Y S, KIM J R, KIM J H, MIN J Y, BAE S W, LEE M R, LEE J Y, JANG H J, ZHANG X, LI Z, LI M, PAE S, MIN J, JIN Z, KIM J, LEE Y, LEE M, LEE J, CHANG H J

An anode active material for lithium secondary battery comprises a coating layer containing boron and conductive material, bonded to the surface of carbon-based particle.

LEE M R, KANG H G, LEE J H, LEE J, KANG H, LEE M, LI M, LI Z

Anode slurry used for forming anode used for lithium-sulfur batteries, comprises positive electrode active material, conductive material, binder and solvent.

LEE M, PARK E K, SHIN D, SOHN K, LEE M J, PARK E, SUN Q, PIAO E

Field effect transistor has channels having hollow closed cross-sectional structure when viewed in first cross-section formed by plane across source and drain electrodes in direction perpendicular to substrate, and gate insulating layers.

YOO M, SHIN H, KWON J, LEE M, SEOL M, YU M, SHEN X, QUAN J, HYUN L, SHIN H J, YOO M S

Field effect transistor (FET) for electronic device, has gate insulating layers that are provided in channels, and gate electrode that is insulated from source electrode and drain electrode.

SEOL M, LEE M, KWON J, SHIN H, YOO M

Semiconductor device i.e. fin FET, for use in e.g. memories, has channel layer formed on gate dielectric and comprising two-dimensional semiconductor material, and source electrode and drain electrode electrically connected to channel layer.

LEE M, SEOL M, CHO Y, SHIN H

Field effect transistor, has gate insulating layer including insulative, high-dielectric constant, two-dimensional material on channel layer, gate electrode provided on layer, and electrodes electrically connected to channel layer.

LEE M, SEOL M, JANG H W, CHO Y, SHIN H

Nonvolatile memory device comprises resistance switching layer configured to change resistance value based on illumination of light irradiated, and resistance switching layer configured to maintain changed resistance value.

LEE M, JANG H, HAM D, LIU C, HINTON H, KIM H, SHIN H, HYUN L, HAM D H, SHIN H J, JIN H, SHEN X, HINTON H J

Preparation of carbon nanotube fibers used in e.g. production of transparent conductive film, involves preparing carbon nanotube aggregate from carbon source in presence of catalyst, contacting aggregate with graphene oxide, and fiberizing.

OH E G, KIM J E, LEE M J, LEE J H, KIM J H, KWON W J, LEE W J, LEE J K, OH E, KIM J, LEE M, LEE J, KWON W, LEE W

Manufacture of functionalized graphene involves mixing graphene, and double-bond bearing salt, and heat treating mixture.

LEE M J, KWON W J, JUN G H, IYIO J Y, LEE Y R, BYEON J Y, LEE M, KWON W, JUN G, BYEON J, LEE Y, JI Y