国家/地区 欧洲专利局（EPO）（16）
IPC部 H（11） C（8） B（7）
A（2） G（2）
IPC大类 H01（11） C01（7） B01（5）
B82（4） A61（2） C23（2）
H05（2）
IPC小类 C01B（6） H01L（6） H01M（5）
B01J（4） B82Y（4） A61B（2）
B01D（2） C01G（2） C23C（2）
IPC H01M004/62（5） H01M010/052（5） H01M004/36（4）
B82Y030/00（3） C01B031/02（3） C01B031/04（3）
H01M004/38（3） H01M004/48（3） H01M004/587（3）
A61B005/00（2） B82Y040/00（2） C01B032/182（2）
C01B032/184（2） C01B032/192（2） C01B032/194（2）
发明人 LEE S（16）
公开年 2022（5） 2021（4） 2012（2） 2016（2） 2023（2）
申请年 2022（5）  2021（4）  2015（2）  2020（2） 
专利权人 LG ENERGY SO.（4） SAMSUNG ELEC.（3） INTEL CORP（2）

Electronic device for use in electronic apparatus, has two-dimensional material layer formed between channel layer and gate electrode, where material layer blocks electron transfer between gate electrode and channel layer.

SHIN K, BYUN K, LEE S, KIM C, LEE C, LI C, JIN C, SHIN K W, BYUN K E, LEESANGSOO, LEE C S

Integrated circuit structure for use in computing device, has graphene layer including first side coupled to conductor, and second side perpendicular to first side, and two-dimensional transition metal dichalcogenide layer coupled to base.

NAYLOR C, MAXEY K, OBRIEN K, DOROW C, LEE S, PENUMATCHA A V, AVCI U E, METZ M, CLENDENNING S B, METZ M V, OBRIEN K P, NAYLOR C H, KIRBY M, CHELSEA D, RISUDARAT, VERMA P A, ABSIYUGARI, BEE C S, ARFCHI U E

Integrated circuit structure for use in computer platform, has interconnect structure coupled to transistors, and graphene fixed over top surface of first metal, where first metal is copper, ruthenium cobalt and molybdenum or tungsten.

NAYLOR C, CHAWLA J, METZ M, KING S, CHEBIAM R, KOBRINSKY M, CLENDENNING S, LEE S, JEZEWSKI C, CHUGH S, BIELEFELD J, CHU S, KIM S

Anode used for lithium secondary battery, comprises negative electrode mixture layer comprising silicon, and negative electrode active material including carbon material and silicon material containing silicon particles having preset particle diameter.

LEE S M, OH S S, KIM H H, JO C H, OH S, KIM H, ZHAO Z, LEE S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Active material used for positive electrode of lithium secondary battery, is made of nickel-based lithium transition metal oxide, and comprises at least one secondary particles comprising aggregate of primary macroparticles, and coating layer comprising carbon material.

DO J, LHO E, PARK K, HAN G, KWAK M, PARK S, LEE D, LEE S, JUNG W, LHO E S, PARK K J, MIN K, PARK S M, LEE D J, LEE S O, JUNG W M, ZHENG W, LI S, LI D, HAN J, PARK G

Positive electrode for lithium ion secondary battery in e.g. electric vehicles, has positive electrode active material layer formed on surface of positive electrode current collector.

KIM J, LEE S, LEESORA, LI S, JIN Z

Syringe-injection-type brain signal measurement and stimulation structure, has integrated circuit connected to transceiver to transmit and receive signals, and connection unit is provided for connecting contact unit and transceiver device.

YANG S G, LEE S W, PARK S W, AHN J H, CHAE Y C, KIM J J, SEONGGU Y, LEE S, AHN J, CHEOL C

Sensor for temperature change measuring, has composite material layer including polymer, electrode layer representing temperature change as resistance change, and another composite material layer provided on composite material layer so that temperature change in one side is transferred to other side.

SEO J E, KO H H, MYOUNG J Y, PARK J H, LEE Y O, KIM Y K, PARK S H, PARK W S, YI S W, LEE T R, DHAE B G, HYUB K, PAK C, LEE Y, LEE S W, CHAE B G, CAI B, LI T, LEE S, PARK W, PIAO S, KIM Y, PARK C, MYOUNG J, KO H, XU J

Negative electrode useful in secondary battery, comprises negative electrode current collector and anode active material layer formed on anode current collector, where anode active material layer comprises silicon-based active material.

LEE S M, LEE Y J, KIM D H, PARK S M, KIM D, PIAO S, JIN D, LI L, LEE S