国家/地区 韩国（6） 美国（3） 世界知识产权组织（2）
IPC部 C（5） H（5）
IPC大类 C01（5） H01（5） C23（2）
IPC小类 C01B（5） H01L（3） C23C（2）
IPC C01B031/04（4） C23C016/26（2） H01L021/02（2）
H01L029/16（2）
发明人 LEE S H（7）
公开年 2016（4） 2017（2）
申请年 2016（7）
专利权人 KOREA INST S.（3）

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Protection film useful for producing organic electronic device, comprises multiple plasma-treated graphene layers, and a non-plasma-treated pure graphene layer deposited on the plasma-treated graphene layer.

BAE S, KIM S J, KIM T W, LEE S H, KIM M J, LEE S K, SEO T H, PARK M

Making graphene composite used to make active material for supercapacitor, involves radiating microwave on graphite oxide-conducting agent mixture, dispersing formed material in liquid and ultrasonic-wave pulverizing, and freeze-drying.

YEON S, JEON M, SHIN K, JIN C, LEE B, PARK S, KIM D, LEE S H, YEON S H, JIN C S, JEON M S, LEE B S, SHIN K H, PARK S K, KIM D H

Preparation of reduced-graphene oxide used for e.g. high-speed semiconductor, involves exposing graphene oxide to reducing agent, and irradiating light to exposed graphene oxide for reducing graphene oxide.

LEE Y, CHO M S, LEE S H, JUNG Y J, SANG H L, YOO J J

Semiconductor device i.e. transistor, for e.g. flat panel display, has diffusion stopper with stuffing layer partially adhered on area surface of graphene layer and including polycrystalline structure formed on areas of graphene layer.

KIM K, LEE S, KIM M, KIM K B, LEE S H, KIM K J, KIM M S

Polymer nanomesh used for preparation of graphene nanomesh, has planar structure having cyclized nanomesh-forming polymer and two-dimensional holes arranged on planar structure.

JOH H, SON S Y, LEE S H, KIM T

Phase change memory device for use in integrated circuits, has graphene layer formed on lower electrode, phase change material layer formed on graphene layer and insulating layer, and upper electrode placed on phase change material layer.

KIM Y, AHN C, SOOD A, POP E, WONG H S P, GOODSON K E, FONG S, LEE S, NEUMANN C M, ASHEGHI M, KIM Y S, AHN C Y, LEE S H, WONG H P