国家/地区 韩国（5）
IPC部 H（5） C（2）
IPC大类 H01（5） C01（2） C23（2）
IPC小类 H01L（5） C01B（2） C23C（2）
IPC C01B031/02（2） C23C016/26（2） H01L021/027（2）
H01L021/20（2）
发明人 LEE S S（5）
公开年 2012（5）
申请年 2010（2）  2011（2） 
专利权人 KOREA RES IN.（3） SAMSUNG LED .（2）

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Manufacture of graphene used for e.g. graphene conducting wire, for semiconductor device e.g. memory, involves controlling electrical characteristics by doping nitrogen to graphene.

LEE S S, JUNG M W, PARK B K, JEONG S J, LEE Y K, CHUNG T M, KIM C G, AN K S, SHIN Y S, JUNG D

Manufacturing method of patterned graphene used in graphene-based device, involves forming metal catalytic layer on substrate, and growing graphene layer on portion in which metal catalytic layer is not formed.

LEE S S, JUNG D S, AN K S, PARK B K, LEE Y K, KIM C G, CHUNG T M, SHIN Y S, JEONG S J

Method for manufacturing nitride single crystal of semiconductor LED, involves forming mask layer on nitride base layer, and forming multiple openings in upper side of mask layer, where mask layer is made of graphene.

CHUNG H J, HWANG S W, KIM M H, SEONG H K, LEE S S, CHA N G

Light emitting device, has compound layout structure laminated with semiconductor layers and active layer, graphene layer coated with exterior part of semiconductor layout structure, and light emission part provided with electrode.

LEE S S, KIM M H, SONE C S, HWANG S W, HONG B H