国家/地区 台湾（6）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（6）
IPC H01L021/768（5） H01L023/532（5） H01L023/528（3）
H01L023/48（2） H01L023/522（2）
发明人 LI S（6）
公开年 2023（4）
申请年 2022（5） 
专利权人 TAIWAN SEMIC.（5）

Semiconductor structure use in semiconductor integrated circuit industry, has dielectric layer formed on substrate, graphene conductive structure formed with graphene layer, and graphene layer extending direction parallel to inner side surface of dielectric layer.

LI M, LU M, LI S, ZHAN Y, YANG S, GUO Z, LEE M, CHAN Y, KUO T

Method for manufacturing semiconductor structure, involves forming graphene conductive structure on metal layer, where conductive graphene is filled in interconnection channel and electrically connected with contact piece.

LI M, YANG S, ZHAN Y, LI S, ZHONG J, YEH C, LEE M, CHAN Y, CHUNG C

Interconnection structure, has graphene layer arranged between first graphene layer and second graphene layer, where second graphene layer is arranged between conductive feature and dielectric material.

SUI X, ZHANG X, HUANG X, YANG G, CAI C, LEE S, LI S, SHUE S, CHANG H, HUANG H, YANG K, TSAI C, LEE C

Interconnection structure useful for semiconductor device, has more than one first conductive features disposed in first dielectric layer, where more than one first conductive features include first metal, and multiple graphene layers include second metal, which is different from first metal.

SUI X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Intraconnection structure useful in a post-section process of an integrated circuit i.e. semiconductor device, has second portion of conductive layer adjacent to first portion of conductive layer, and dielectric material contacts first interface portion and third interface portion.

MU X, LI M, YANG S, ZHAN Y, LI S, SHUE S, LEE M, CHAN Y

Surface-metalized polymer article comprises polymer component, first layer composed of multiple graphene sheets and conducive filler coated on polymer component surface, and second layer of plated metal deposited on first layer.

LIN Y, LEE S, JHONG Y, ZHAMU A, JANG B Z, LI S