国家/地区 中国（11）
IPC部 H（7） C（5） B（4）
G（4）
IPC大类 H01（7） C01（4） G03（4）
B01（2） B82（2） C07（2）
IPC小类 H01L（7） C01B（4） G03F（4）
B01J（2） B82Y（2） C07C（2）
IPC G03F001/62（4） G03F001/22（3） H01L021/033（3）
H01L023/532（3） B01J029/84（2） B82Y030/00（2）
B82Y040/00（2） C01B032/194（2） C07C002/86（2）
C07C015/08（2） G03F001/48（2） G03F001/64（2）
H01L021/768（2）
发明人 LI X（11）
公开年 2022（6） 2018（3） 2014（2）
申请年 2021（4）  2013（2）  2016（2）  2022（2） 
专利权人 TAIWAN SEMIC.（5） CHINA PETROC.（2） CHINA PETROL.（2） CHINA PETROL.（2）
SAMSUNG ELEC.（2） SHANGHAI PET.（2） TAIWAN TEXTI.（2）

Preparing optionally substituted monocyclic aromatic hydrocarbons from optionally substituted furan, comprises contacting organic phase containing optionally substituted furan and ethylene with molecular sieve catalyst.

YANG W, LI X, WANG Z, FENG X, HAN X, XU R, LIU C, YUAN Z, QIAO J

Two-phase solvent system preparing 2,5-hexanedione by catalyzing and converting biomass, comprises organic solvent phase containing hydrophobic hydrogenation catalyst, and aqueous solution phase containing anions of VIIA elements.

YANG W, LI X, WANG Z, HAN X, FENG X, YUAN Z, QIAO J, LIU C, LAN D

Protection assembly for use during optical lithography patterning process, has outer surface and inner surface, which are connected with each other, where conformal coating is formed on outer surface of protective film.

LIN J, GAO C, LI X, LIAN D, XU B, HSU P, LIEN T, LEE H, GAU T, LIN C

Method for forming thin film assembly of film-shaped object, such as semiconductor wafer, involves reducing thickness of film to obtain thin film, and stretching membrane using stretching frame to obtain extended membrane.

LIN J, GAO C, CHEN L, LIAN D, XU B, LI X, LIN C, GAU T, LIEN T, HSU P, LEE H

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Semiconductor device comprises second level wiring which is disposed at second metal level higher than first metal level, and includes second via connected to first line wiring, and second line wiring connected to second via.

LEE H B, KIM W D, LEE M J, LEE J E, LEEMINJOO, LI X, JIN W, LI M, LI J

Method for fabricating pellicle in semiconductor industry, involves performing etching process to rear surface of substrate to form pellicle including pellicle membrane that includes graphene layer while using first dielectric layer as mask.

LIN Y, CHEN H, LIN C, LEE H, KU Y, LO W, YEN A, CHIEN M, CHEN X, LIN Z, LI X, GU Y, LUO W, YAN T, LIN J, QIAN Z, CHIEN M Z

Air flow generating device for preparing graphene powder, has thread which is spirally distributed on outer surface of rotating portion from bottom of rotating portion toward top of rotating portion, and passes through thread.

WU D, ZHANG T, LI X, LIN B, WU T, CHANG T, LI H

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Ultrasonic spray coating for producing optically transparent/electrically conductive film involves forming aerosol droplets of graphene material in second liquid, depositing aerosol droplets onto supporting substrate, and removing liquid.

LIN Y, ZHAMU A, JANG B Z, LEE S, LIN J C, LEE S Y, LIN J, JANG B B, LIN Y J, LEE S Y, LIN R, LI X