国家/地区 美国（6）
IPC部 H（6） B（2） C（2）
IPC大类 H01（6） B82（2） C23（2）
IPC小类 H01L（6） B82Y（2） C23C（2）
IPC H01L029/06（4） H01L021/02（3） H01L021/336（3）
H01L029/78（3） B82Y040/00（2） B82Y099/00（2）
C23C016/02（2） C23C016/26（2） H01L029/16（2）
H01L029/66（2） H01L029/775（2） H01L029/786（2）
发明人 LIANG Q（6）
公开年 2013（2）
申请年 2012（2） 
专利权人 INST MICROEL.（4） LIANG Q（3） ZHU H（3） APPLIED MATE.（2）
JIN Z（2） ZHONG H（2）

Improving graphene deposition involves exposing substrate surface to oxygenating plasma to improve substrate surface quality or deposition parameter, where oxygenating plasma comprises oxygen or water, oxygenating plasma is microwave plasma, remote plasma, conductively coupled plasma.

YIEH E Y, NEMANI S D, YING C C, LIANG Q, CHEN E, ZHOU J

Forming graphene layer for improving graphene deposition, involves exposing a substrate surface comprising a dielectric material to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form graphene layer.

ZHOU J, CHEN E, LIANG Q, YING C C, NEMANI S D, YIEH E Y

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T

Graphene device structure for complementary metal-oxide-semiconductor, has semiconductor doped regions separated from gate region, where contacts of structure are formed on semiconductor doped regions.

LIU X, ZHU H, WANG W, LIANG Q, JIN Z, ZHONG H, YE T