国家/地区 中国（8）
IPC部 C（6） H（4）
IPC大类 C01（6） H01（4）
IPC小类 C01B（6） H01L（4）
IPC C01B031/04（6）
发明人 LIN S（9）
公开年 2014（9）
申请年 2014（5）  2013（4） 
专利权人 UNIV FUDAN（2） UNIV ZHEJIAN.（2）

Graphene/gallium arsenide solar battery, has back electrode connected with n-type doped or p-type doped gallium arsenide layer, and graphene comprising front face connected with gallium arsenide layer.

LIN S, LI X

Composite nanophase absorbing material obtained by uniformly loading cobalt and graphene on a thin surface, and drilling to form nano-granule.

LIN S, WANG F, YU J, ZHU H

Preparation of large-sized graphene with high quality and controllable layer number involves stirring graphite powder or crystalline flake graphite and intercalating agent, repeatedly washing with water and acetone, filtering, and drying.

DONG L, LIN S, LU H, YANG C, ZHANG J

Manufacturing graphene film comprises annealing first substrate in furnace filled with mixed gas, moving substrate into growing chamber of molecular beam epitaxy system, heating carbon source and depositing it on surface of substrate.

LIN S, LIN M, LIN S Y, LIN M Y

Activated graphene sheet produced by processing a layer of graphene sheet by adding sulfuric acid, nitric acid and potassium permanganate to the sheet, and activating the processed sheet by adding potassium hydroxide.

XU H, LIN Q, LIN S, LUO S

Preparation of small-diameter graphene sheet involves mixing crystalline graphite and organic solvent, forming crystalline graphite dispersion, ball milling, obtaining graphene dispersion liquid, centrifuging, washing, and filtering.

CHEN G, LIN S, ZHAO L

Large-scale production of graphene involves applying intercalating agent for raw materials to obtain intercalated graphite, filtering, dispersing in strong aqueous alkaline solution, carrying out ultrasonic treatment and spray-drying.

DONG L, LIN S, LU H

Graphene optical FET, has two gold electrodes covered with silicon layer, and cadmium selenide quantum point layer arranged between two gold electrodes, where diameter of cadmium selenide quantum point layer is in specific value.

LIN S, LI W, ZHANG J

Vertical-type graphene LED chip, has substrate bonded with graphene through metal substrate layer, where substrate is connected with interface and formed with p-type and n-type gallium nitride layers and multi-quantum-well layer.

LIN S, LI X